Cu-based shape memory alloys (SMAs) and among these copper–zinc (Cu–Zn), copper–aluminum (Cu–Al), and copper–tin (Cu–Sn) alloys both with and without ternary additions have shown potential due to their good shape recovery, ease of fabrication, excellent conductivity of heat and electricity. However, their applications are still limited because of the shortcomings of thermal stability, brittleness, and mechanical strength, which are closely related with microstructural characteristic of Cu-based SMAs, such as coarse grain sizes, high elastic anisotropies, and the congregation of secondary phases or impurities along the grain boundaries. Efforts are being made to overcome these drawbacks with proper ternary additions, adopting alternative processing routes and also optimizing the heat treatment cycles. The present article will deal with the current status of research and commercialization of Cu-based SMAs and dwell upon the future directions in which research should be targeted and future prospects of converting the research into components for commercial use.

Plate-shaped Gd2O3 nanoclusters (GNCs) with well-controlled loading were fabricated by using amphiphilic poly(maleic anhydride-alt-1-octadecene) (PMAO) grafted with PEG as nanogel. The hydrodynamic size of the obtained GNCs was well controlled to <260 nm under appropriate emulsion process conditions and they showed excellent long-term dispersibility in phosphate buffer saline. MRI measurements clearly indicated the substantial improvement in T 1 effect of the nanoclusters as compared with the individual Gd2O3 nanoplates. The obtained GNCs possessed a high r 1 value of 7.948 s−1mM−1 [Gd], which is 2.23 times higher than that of the commercial product Gd-DOTA, and low r 2/r 1 of 1.04. In vitro test of the obtained GNCs was demonstrated in NIH/3T3 cell lines, and clear T 1-weighted images were obtained. Thus, the PMAO-g-PEG assisted GNCs were potentially useful for T 1-weighted MRI contrast agents.

The present study is dealing with the basic physics for a novel way to generate a free-formed ceramic body, not like common layer by layer, but directly by Selective Volume Sintering (SVS) in a compact block of ceramic powder. To penetrate with laser light into the volume of a ceramic powder compact it is necessary to investigate the light scattering properties of ceramic powders. Compared with polymers and metals, ceramic materials are unique as they offer a wide optical window of transparency. The optical window typically ranges from below 0.3 up to 5 µm wave length. In the present study thin layers of quartz glass (SiO2) particles have been prepared. As a function of layer thickness and the particle size, transmission and reflection spectra in a wave length range between 0.5 and 2.5 µm have been recorded. Depending on the respective particle size and by choosing a proper relation between particle size and wave length of the incident laser radiation, it is found that light can penetrate a powder compact up to a depth of a few millimeters. With an adjustment of the light absorption properties of the compact the initiation of sintering in the volume of the compact is possible.

A technique has been developed for determining coefficients in the power approximation of the “stress–strain” diagram by results of scratch testing with a Berkovich indenter under a normal load of 5 mN on the indenter. The procedure is based on a comparison of experimental results with the finite element simulation of the test process. The technique is intended for application on nanomechanical testing equipment enabling one to perform tests with recording of loading diagrams in terms of the “normal force – indenter displacement” coordinates. To obtain correct results, one must observe the following restrictions: indenter penetration depth > 150 nm under a loading of 5 mN with the indenter tip curvature radius R < 50 nm; indenter penetration depth > 250 nm with 50 < R < 100 nm; the tested metal must be ductile enough, for a scratch to be formed by the mechanism of plastic deformation rather than fracture.

Additive manufacturing has provided a pathway for inexpensive and flexible manufacturing of specialized components and one-off parts. At the nanoscale, such techniques are less ubiquitous. Manufacturing at the nanoscale is dominated by lithography tools that are too expensive for small- and medium-sized enterprises (SMEs) to invest in. Additive nanomanufacturing (ANM) empowers smaller facilities to design, create, and manufacture on their own while providing a wider material selection and flexible design. This is especially important as nanomanufacturing thus far is largely constrained to 2-dimensional patterning techniques and being able to manufacture in 3-dimensions could open up new concepts. In this review, we outline the state-of-the-art within ANM technologies such as electrohydrodynamic jet printing, dip-pen lithography, direct laser writing, and several single particle placement methods such as optical tweezers and electrokinetic nanomanipulation. The ANM technologies are compared in terms of deposition speed, resolution, and material selection and finally the future prospects of ANM are discussed. This review is up-to-date until April 2014.

Phase change memory (PCM) is an emerging technology that combines the unique properties of phase change materials with the potential for novel memory devices, which can help lead to new computer architectures. Phase change materials store information in their amorphous and crystalline phases, which can be reversibly switched by the application of an external voltage. This article describes the advantages and challenges of PCM. The physical properties of phase change materials that enable data storage are described, and our current knowledge of the phase change processes is summarized. Various designs of PCM devices with their respective advantages and integration challenges are presented. The scaling limits of PCM are addressed, and its performance is compared to competing existing and emerging memory technologies. Finally, potential new applications of phase change devices such as neuromorphic computing and phase change logic are outlined.

Fundamental latency and energy limitations are driving major changes in communication and computation hardware. Parallel multicore and multiprocessor architectures are emerging as highly interconnected, communication-centric computation tools that at high node count will approach neural network connectivity and complexity. Monolithically integrated silicon photonics with electronics offers a promising platform for scaling functionality with high volume manufacturing and short design cycle times. The system parameters for this emerging “design for function” paradigm are cost, energy, and bandwidth density. The platform has been built on transmission of a λ ≈ 1550 nm photon wavelength; Si, Ge, Si3N4, and SiO2 materials; and standard complementary metal oxide semiconductor foundry processing. Dimensional shrink is achieved through strong signal confinement in high refractive index contrast material composites. Precision pattern transfer has enabled both photonic interconnect and signal processing functionality. New materials, process integration, and packaging are the keys to success.

This article reviews the potential of graphene and related two-dimensional (2D) materials for applications in micro- and nanoelectronics. In addition to graphene, special emphasis is placed on transition metal dichalcogenides (TMDs). First, we discuss potential solutions for application-scale material growth, in particular chemical vapor deposition. We describe challenges for electrical contacts and dielectric interfaces with 2D materials. The device-related sections in this review first weigh the pros and cons of semi-metal graphene as a field-effect transistor (FET) channel material for logic and radio frequency applications. This is followed by an introduction to alternate graphene switch concepts that utilize the particular properties of the material, namely tunnel FETs, vertical devices, and bilayer pseudospin FETs. The final section is dedicated to semiconducting TMDs and their integration in FETs using the examples of n-type molybdenum disulfide (MoS2) and p-type tungsten diselenide (WSe2).

Extension of microelectromechanical systems (MEMS) into more extreme operating conditions will require a wider range of material properties than are currently available in conventional systems. Successful integration of new materials is dependent on concurrent development of compatible fabrication routes and scale appropriate evaluation techniques. This review focuses on emerging material classes that have potential to replace silicon-based MEMS in elevated temperature applications. Basic silicon mechanical properties and micromachining methods are reviewed to provide context for developing material systems such as silicon carbide, silicon carbonitrides, and several nickel-based alloys. Potential improvements in strength, thermal stability, and reliability are juxtaposed with fabrication, reproducibility, and economic feasibility issues that must also be addressed.