Quantum wells created from nanostructured transition metal oxides offer unique possibilities for creating and manipulating quantum states of matter, including novel superconductors, high Curie temperature magnets, controllable metal-insulator transitions, and new topological states. This article explores what is known and conjectured about confined electronic states in oxide quantum wells. Theoretical challenges are reviewed, along with issues arising in the creation of oxide quantum wells. Examples from the current experimental state of the art are summarized, open questions are discussed, and prospects for the future are outlined. The key roles of epitaxial strain and proximity effects are emphasized.

Oxide thin films and interfaces exhibit a variety of novel magnetic phenomena, which are unknown in well-crystallized bulk material. The origin of these phenomena must be sought in the changes in electronic structure due to broken symmetry, strain, and electronic or atomic reconstruction, including oxygen and cation defects. These effects are first discussed in magnetically ordered 3d oxide thin films and heterostructures, wherein a metal-insulator transition up on changing film thickness may influence the magnetism. In heterojunctions, the interface magnetic order can be modified, and exchange bias may appear. A high-temperature ferromagnetic-like response in dilute and undoped oxide films appears to be associated with defects near the substrate interface. A two-dimensional electron gas emerges at interfaces of a polar oxide and SrTiO3, where electronic reconstruction brings electrons into the bottom of the Ti d band; ferromagnetism then emerges as a result of localized or delocalized d states in the presence of atomic defects.

Novel electronic and magnetic phases are being observed at interfaces between insulating, non-magnetic oxide compounds, with the most notable example being the interface between SrTiO3 and LaAlO3. The basic properties of these interfaces will be discussed, as well as prospects for applications and possible future developments.

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the root-mean-square surface roughness of h-BN films when compared to a high temperature growth on Al2O3(0001) and Si(111) substrates. Additionally, the stoichiometry is shown to be highly dependent on the initial polyborazylene deposition temperature. Importantly, chemical vapor deposition (CVD) graphene transferred to direct-grown boron nitride films on Al2O3 at 400 °C results in a >1.5x and >2.5x improvement in mobility compared to CVD graphene transferred to Al2O3 and SiO2 substrates, respectively, which is attributed to the combined reduction of remote charged impurity scattering and surface roughness scattering. Simulation of mobility versus carrier concentration confirms the importance of limiting the introduction of charged impurities in the h-BN film and highlights the importance of these results in producing optimized h-BN substrates for high performance graphene and TMD devices.

A series of Ni/C catalysts with different Ni content (15, 20, and 30 wt% Ni) were prepared by the wet incipient impregnation method. Their textural properties were studied by surface fractal dimension (D s) and nonlocal density functional theory using nitrogen sorption data. Their structural properties were studied by x-ray diffraction, Rietveld refinement, radial distribution functions (RDFs), and electron density maps of Fourier. Surface areas of Ni/C catalysts decreases slightly from 614 to 533 m2/g as Ni content increases from 15 to 30 wt%; however, the Ni crystallite size (5.1–31.4 nm) increases as the nickel content increases. Many point defects were found by Rietveld refinement in nickel nanostructures of Ni/C catalysts with 20 and 30 wt% Ni. This was confirmed by RDFs and electronic density maps. On the other hand, the hydrogen production via the photodehydrogenation of ethanol is very sensitive to the nickel crystallite size and the number Ni atoms in nickel nanostructures. The maximum reaction rate (363.64 μmol/h) is achieved on Ni/C catalyst with 15 Wt% Ni content which has the smallest crystallite size (5.1 nm) and less point defects in its nickel nanostructures. Ab initio calculations were performed to propose a reaction mechanism in the photodehydrogenation of ethanol.

In this study, stimuli-responsive ionic poly(acrylamide–itaconic acid) (P(AAm–IA)) and poly(N,N-dimethylacrylamide–itaconic acid) (P(DMA–IA)) hydrogels have been prepared by free radical crosslinking copolymerization in aqueous solution using N,N-methylenebisacrylamide as the crosslinking agent. In particular, the swelling ratio and elasticity of both hydrogel systems including the effect of ionic comonomer itaconic acid (IA) content were investigated. In spite of the similarity in monomer/crosslinker ratio and the content of ionic comonomer in the hydrogel structures, comparable differences were observed in their swelling capacity and elasticity. Compared to P(DMA–IA) hydrogels, P(AAm–IA) hydrogels exhibit higher swelling capacity in water and a more pronounced dependency of the swelling ratio on the ionic comonomer content. The incorporation of a small amount of IA into the network structure causes the hydrogel system to exhibit polyelectrolyte type swelling behavior. P(AAm–IA) and P(DMA–IA) hydrogels showed good response to the valency of counterions and pH of the external solution.

Absorption losses in tellurite glasses due to OH− ions were reduced by melting the glasses under a reactive atmosphere of Cl2 + O2 gas. Incorporation of dry Cl2 + O2 gas has a major influence on the reduction of OH− species, which is found to be consistent with thermochemical data. Absorption loss due to OH− ions in bulk glasses prepared from the as-received raw materials and processed under a reactive atmosphere was 1000 and 60 dB/m, respectively. Gaussian fits have been used to identify the different species of OH− attached to the structural units present in the glass. All of the OH− species (free and bonded to Te), units can be reduced by melting the starting raw materials in a reactive atmosphere of Cl2 + O2. The net reduction in OH− absorbance at 3.2 µm was 1.1 cm−1, which is equivalent to 500 ppm. OH− reduction in tellurite glasses using O2 gas bubbling shows a reduction in the fundamental absorption band from 1.8 to 0.57 cm−1 after 75 min.

We show that, by changing and tuning the direction of the As flux on a rippled substrate, at temperatures higher than 530 °C and high As/In flux ratio, a selective growth of InAs dots can be obtained on GaAs. This is an undisclosed effect related to the Arsenic flux in the molecular beam epitaxial growth of InAs quantum dots (QDs) on GaAs(001). This effect cannot be explained by a shadowing effect, due to the gentle slopes of the mounds (1–3°), and reveals instead that As plays a fundamental role at these growth conditions. We have developed a kinetic model, which takes into account the coupling between cations and anions, and found that the very small surface gradient in the anion flux, due to the oblique evaporation on the mounded surface, is responsible for a massive drain of cations toward the surface anion-rich areas, thus generating the selective growth of QDs.

A Cu–Ni sectioned cathode made up of two hemicycles of each of the metals was used for reactive co-sputtering of a thin film combinatorial library of Cu–Ni oxides covering a total compositional spread of 63 at.%. The thickness profiling of the library showed a nonuniform film thickness with a maximum region shifted toward the Cu side of the cathode. The presence of CuO, Cu2O, NiO, and metallic Cu–Ni alloys was identified during the scanning x-ray diffraction investigations along the compositional spread. A distinct structural zone was defined between Cu–14 at.% Ni and Cu–19 at.% Ni, where the scanning electron microscopy investigations showed a higher surface porosity combined with smaller grain sizes. This zone corresponds to the maximum film thickness region and correlates well with the position of the maximum work function of the Cu–Ni oxide films as mapped using a scanning Kelvin probe. During local corrosion studies focused on Cu dissolution, an improved corrosion resistance was identified in the Ni rich side of the compositional spread.

Field emission (FE) measurements are reported from carbon nanotube (CNT) fibers and laser-patterned free standing films fabricated by direct online condensation from a floating catalyst chemical vapor deposition reactor. Fiber and film cathodes showed stable emission in the 1–2 mA current (I) range at maximum cathode temperatures less than 1000 °C; film cathodes show localized heating at the triangular tips and higher maximum temperatures than the fibers. Fowler–Nordheim (FN) analysis indicated a change in the morphology of the emitters with increasing external electrical field (E ext). Fiber cathode I–E ext data are interpreted as FN emission from the fiber tip which is eventually limited by space-charge effects. At higher E ext, FN emission from the fiber sidewall occurs. The single fiber cathode stopped emitting abruptly when field induced self-heating effects became significant. For CNT films, self-heating effects can destroy a portion of the film, but FE can still occur from other areas.

Antiperovskite manganese nitrides Mn3MN (M = Zn, Ni, Cu…) have been extensively studied in the past decade due to their many interesting properties, such as negative thermal expansion. To get a better understanding of the origin of these phenomena, the information from the microscopic scale is necessary, so we performed systematic transmission electron microscopic study of Mn3Zn0.8Ni0.2N and found that the sample particle is wrapped in a thin MnO layer. The same result was also found in Mn3Zn0.5Ni0.5N and Mn3ZnN, indicating that it is a common phenomenon in this kind of compound. The presence of the MnO surface layer was also confirmed by the macroscopic XPS measurements. Our study suggests that M is easier to be lost than Mn in manganese nitrides Mn3MN (M = Zn, Ni, Cu…), and this character is much more obvious on the surface, i.e., this kind of compound has a strong surface activity. Figure 6 could best represent this manuscript.