Background: CSF shunt obstruction secondary to omental adhesion alone, without cyst or pseudocyst formation, is rarely reported in the literature. Here we present a case of distal catheter obstruction due to omental wrapping with an atypical presentation of shunt failure. CT imaging demonstrated omental stranding. The shut revision was entirely laparoscopic. The case is supplemented with intraoperative images. Methods: Chart review and literature search. Results: 33-year-old female with right-sided cystoperitoneal shunt for posterior fossa arachinoid cyst who presented to ED with a picture of a surgical abdomen suggestive of acute cholecystitis. Interestingly, this patient had a gallbladder removed a year ago. CT abdomen showed non-specific findings of omental fat stranding around the tip of the catheter. Although this patient had no headache or any neurological symptoms, CT brain was done and showed increase in the cyst size. Diagnostic laparoscopy showed Intraoperative findings suggestive of active omental role in the aetiology of this shunt malfunction. After adequate adhesiolysis, the catheter was noted to be working and dripping CSF and repositioned into the peritoneal cavity. Conclusions: Shunt malfunctions due to omentoperitoneal adhesion is rarely reported but may in fact be under-recognized. This requires high index of suspicion especially in case of equivocal imaging.

This paper describes an overview of our recent discovery – clear demonstration that LiF crystals can be efficiently used as a high-performance neutron imaging detector based on optically stimulated luminescence of color centers generated by neutron irradiation. It is shown that the neutron images we have obtained are almost free from granular noise, have a spatial resolution of ${\sim}5.4~{\rm\mu}\text{m}$ and a linear response with a dynamic range of at least $10^{3}$. The high contrast and good sensitivity of LiF crystals allow us to distinguish two holes with less than 2% transmittance difference. We propose to use such detectors in areas where high spatial resolution with high image gradation resolution is needed, including diagnostics of different plasma sources such as laser and z-pinch produced plasmas.

The existence of Pt7Cu ordering phase (intermetallic compound) was investigated by ab initio calculations and high voltage electron microscopy (HVEM) focusing on irradiation-induced ordering. The Pt7Cu ordering phase (cF32, prototype Ca7Ge) was predicted at 0 K through density functional theory (DFT), and using cluster expansion (CE) method and grand canonical Monte Carlo (GCMC) simulation, the ordering temperature of fcc-based Pt7Cu ordering phase was estimated to be above room temperature. The formation of Pt7Cu ordering phase was confirmed by a short-time irradiation for 3.6×103 s at 600 K. MeV electron irradiation can reduce drastically the annealing time for the ordering in the Pt-Cu alloy system, indicating that the combination of the prediction by ab initio calculations and HVEM can offer the unique opportunity to investigate the existence of ordering phase in alloys.

Preparation of a sigma-CrFe single-phase specimen was achieved by arc melting of pure Fe and Cr, cold rolling, and subsequent annealing at 973 K or 1073 K in vacuum. Cold rolling before annealing is effective for the annealing-induced formation of sigma-CrFe from the bcc solid-solution phase. The phase stability and the structural change from sigma-CrFe to a bcc solid-solution phase under fast electron irradiation were investigated by in situ transmission electron microscope (TEM) observation in the temperature range between 22 K and 473 K by using an ultra-high voltage electron microscope (UHVEM). The phase transition of sigma-CrFe by fast electron irradiation was found to occur at a particular temperature.

Results are presented of a study of {113}-defect formation in Si nanowires withdiameters ranging from 50 to 500 nm. The Si nanowires, used for the processingof tunnel-FET's, are etched into a moderately doped epitaxial Si layeron a heavily doped n-type Si substrate. {113}- defects are created in situ by 2MeV e-irradiation at temperatures between room temperature and 375 °Cin an ultra high voltage electron microscope. The observations are discussed inthe frame of intrinsic point defect out-diffusion and interaction with dopantatoms.

We have investigated microstructures in both the antiferroelectric (AFE) and relaxor states of Pb(In1/2Nb1/2)O3 (PIN) with the perovskite structure by a transmission electron microscopy (TEM). Electron diffraction (ED) experiments revealed that the AFE state is characterized as the modulated structure with the modulation vector of q =1/4 1/4 0. High-resolution TEM images clearly show the coexistence of two types of domains consisting of the modulated and the nonmodulated structures with the 100 ∼ 200 nm size. On the other hand, in the relaxor state there appear two types of diffuse scatterings in the ED patterns. One is diffuse spots at the 1/2 1/2 0-type reciprocal positions and the other is diffuse streaks elongating along the <110> direction around the fundamental spots. The real-space TEM images clearly demonstrate the presence of nanodomains with the average size of ∼ 5 nm. These nanodomains in the relaxor state should be responsible for the characteristic dielectric properties.

We review observational results of PAH emission in harsh interstellar environments, whichare mostly based on recent works by Spitzer and AKARI. The harsh environments includeshock regions in our Galaxy, the ionized superwinds and haloes of external galaxies, andthe hot plasmas of elliptical galaxies. Owing to the unprecedented high sensitivity forPAH emission with Spitzer and AKARI, it is found that an appreciable amount of PAHs arepresent in some cases with such hostile conditions. Some of them exhibit unusual PAHinterband strength ratios, reflecting either evolution of PAHs or physical conditions ofthe ISM. The distribution of the PAH emission, as compared to that of dust emission, isshown to discuss their ways of evolution and survival.

This paper summarizes research activities in National Institute of Radiological Sciences (NIRS) for evaluation of the radiation effects on selected terrestrial and aquatic organisms as well as the ecosystems. Seven organisms, conifers, fungi, earthworms, springtails, algae, daphnia and Medaka are presently selected to study. For the estimation of possible radiation dose, transfers of radionuclides and related elements from medium to organisms are evaluated. Dose-effect relationships of acute gamma radiation on the survival, growth, and reproduction of selected organisms have been studied. Studies on the effect of chronic gamma radiation at low dose rate were also started. In order to understand the mechanism of radiation effects and to find possible indicators of the effects, information of genome- and metagenome-wide gene expression has been collected. Evaluation of ecological effects of radiation is more challenging task. Study methods by using three-species microcosm were established, and an index for the holistic evaluation of effects on various ecological parameters was proposed. The microcosm has been simulated as a computer simulation code. Developments of more complicated and practical model ecosystems have been started. The Denaturant Gradient Gel Electrophoresis (DGGE) has been applied on soil bacterial community in order to evaluate the radiation effects on soil ecosystems.

We report the results of mid- to far-infrared spectroscopic observations of Galactic star-forming regions with ISO, Spitzer, and AKARI. Owing to the high sensitivity of the IRS onboard Spitzer, we detected [Si II] 35 μm, [Fe II] 26 μm, and [Fe III] 23 μm lines widely in low-density star-forming regions, and derived gas-phase Si and Fe abundances as 3–100% and <22%, respectively. With the FTS onboard AKARI, we obtained the spatial distribution ofthe [O III]  88 μm emission in two star-forming regions.

We have started a VLBI monitoring program for Asymptotic Giant Branch (AGB) stars at 22 and 43 GHz as part of a project of the VLBI Exploration of Radio Astrometry (VERA) for precisely obtaining the period-luminosity (PL) relation of Galactic Mira variables. Using accurate distances measured with VERA, we reveal PL relation in the Galaxy based on the absolute magnitudes of the sources. We selected the sources for VLBI monitoring so that they have a good coverage of various pulsation periods. Photometry in the infrared J, H, and K bands for over 600 AGB stars has also started since 2003 with the 1m telescope of Kagoshima University to obtain the pulsation periods and magnitudes. Current analysis of the phase referencing VLBI observations of S Crt shows that the parallax of 2.3±0.2 milliarcsec (mas) corresponds to a distance of 435+41−35 pc. From the infrared monitoring data, pulsation periods and magnitudes in K band for 248 sources were obtained.

We have investigated the flat-band voltage (VFB) shifts of tantalum nitride gate MOS capacitors prepared by two methods. One is CVD-tantalum nitride (CVD-TaN) deposited by the chemical vapor deposition technique using Ta[NC(CH3)2C2H5][N(CH3)2]3 as a precursor, and the other one is sputtered tantalum nitride (sp-TaN) electrodes deposited by reactive DC magnetron sputtering. In the case of the CVD-TaN electrodes, the effective work function estimated from the relationship between VFB and the equivalent oxide thickness (EOT) of the MOS capacitors was about 4.4eV after post metallization annealing (PMA) at 400°C, and shifted to the mid-gap after PMA at 950°C. Moreover, the VFB values of MOS capacitors with sp-TaN electrodes also showed the same behavior after PMA. This shift is mainly dependent on the PMA temperature, regardless of the deposition method used. Similar VFB shifts induced by PMA were also observed in sp-TaN/ Al2O3/ SiO2/ p-Si and sp-TaN/ TaOx / SiO2/ p-Si capacitors. However, in the case of the sp-TaN/ TaOx / SiO2/ p-Si capacitors, the VFB shift was also observed when the PDA temperature after the TaOx deposition was 800°C and the PMA temperature after the TaN deposition was only 400°C. These results strongly suggest that this VFB shift caused by the PMA originates from a thin interfacial oxide layer between the TaN gate electrode and the dielectrics. Therefore, the maximum processing temperature after gate electrode deposition is important in order to control the threshold voltage of tantalum nitride gate MOSFETs.

A significant improvement (40–60%) was reported in the low voltage (100–1000V) cathodoluminescence efficiency of ZnS phosphors coated with SiO2 by the sol-gel technique. The properties of the coatings were found to be critically dependent upon the precursor concentration, pH value and the temperature of the solution with optimum performance being obtained for a SiO2 concentration of 1.0 wt%, pH values between 7–9, and a solution temperature of 83 °C. The efficiency curves exhibited a characteristic voltage dependence which was analyzed by a one-dimensional numerical model. Enhanced low voltage efficiency was attributed to a reduction of surface recombination and the actual shape of the efficiency curve was determined by the interplay between the reduction of surface recombination and energy losses in the SiO2 coating.

The structure of the human gene for deoxyribonuclease II (DNase II; EC 3.1.22.1) was determined using several specific primers based on the human DNase II cDNA sequence [Yasuda et al. (1998). J. Biol. Chem. 273, 2610–2616] in a polymerase chain reaction-based strategy. The gene spanned about 6 kb and consisted of 6 exons. No canonical TATA or CAAT boxes could be identified within the 1341 nucleotides upstream of the putative transcription start site, although the 5′-flanking region contained a CpG island and several putative binding motifs for transcription factors Sp1 and ETF. These properties indicate that the DNase II gene is a housekeeping gene and this is compatible with its ubiquitous expression in human tissues. Three different cleavage/polyadenylation sites were identified in the 3′-flanking region, leading to the production of multiple DNase II mRNA species. However, a comparison of the entire translated sequences of the gene from a pair of subjects with homozygous DNase II phenotypes H and L revealed no differences in the nucleotide sequences.

Matrix microstructure of a pitch-based carbon-carbon composite was controlled by an iodine treatment. Coal-tar pitch having the softening point of 101 °C was used as a matrix precursor. The iodine treatment was carried out on a pitch-impregnated specimen at 90 °C for 3–20 h. The specimen was carbonized at 800 °C and graphitized at 2000–3000 °C. The carbon yield increased from 73% to 93% by the iodine treatment. Microstructures of carbonized specimens changed from a flow type texture to a mosaic type one by the iodine treatment. The microstructural development to graphitic structure was suppressed by the iodine treatment.

The effects of freeze-dried soya milk (SM) and Bifidobacterium-fermented soya milk (FSM) on plasma and liver lipids, and faecal steroid excretion were estimated in hamsters fed on a cholesterol-free or cholesterol-enriched diet. Hamsters fed on the cholesterol-free diet containing 300 g FSM/kg had lower levels of plasma VLDL + LDL cholesterol than the animals fed on the control diet. SM in the diet produced a similar pattern without significant differences. In the cholesterol-enriched diet group, SM and FSM decreased the levels of plasma total cholesterol and VLDL + LDL-cholesterol. SM and FSM decreased the plasma triacylglycerol level in both the cholesterol-free and -enriched diet groups. The liver total cholesterol contents in the SM and FSM groups were lower than that in the control group, for hamsters fed on the cholesterol-free diet. The liver triacylglycerol content was not modified by SM or FSM in hamsters fed on either the cholesterol-free or -enriched diet. SM and FSM increased the total bile acid excretion and the proportion of cholesterol entering the cholic acid biosynthesis pathway in both the cholesterol-free and -enriched diet groups. SM and FSM did not affect neutral steroid excretion in the cholesterol-free or -enriched diet group. There was an inverse relationship between VLDL + LDL-cholesterol and faecal bile acid excretion in hamsters fed on the cholesterol-free (r −0.670, P < 0.01) and cholesterol-enriched (r −0.761, P < 0.001) diets respectively. These results indicated that SM had an anti-atherogenic effect, and that this effect was not diminished by prior fermentation.

Beta-iron oxy-hydroxide, which exhibits a (2×2) tunnel-type structure similar to that of (α-MnO2, was found to intercalate reversibly lithium in the tunnels. This material exhibits three voltage plateaus at 2.3, 1.5 and 0.7 V and has an over all discharge capacity of 1100 mAh/g. When cycling in the 2–V region, the material exhibits high capacity of 275 mAh/g and very good cyclic reversibility. X-ray photoelectron spectroscopy (XPS) of the discharged material showed that iron is reduced to the divalent state, and the lithium incorporated in the tunnels is purely ionic. This result explains the good reversibility of this electrode material. When discharged to 0.5 V, however, the structure of the material collapsed, and metallic iron was detected in the X-ray diffraction pattern.

In-situ reflection high energy electron diffraction total reflection angle X-ray spectroscopy (RHEED-TRAXS) was performed to monitor alloy composition at the surface during growth of nitrides by RF-MBE for the first time. TRAXS signal of the GaLα line is found to be more sensitive to the composition at the surface than the GaKαline. A difference in the composition of layer adsorbed on the surface and the solid alloy layer has been identified.

The utility of polysynthetically-twinned (PST) TiAI, which contains a high density of parallel, atomically-flat interfaces within a set of identical crystallographic orientations, as a potential model system for a detailed investigation of interface diffusion is explored. Macroscopic PST crystals were grown in an optical float zone furnace. Thin films were cut from oriented crystals and polished with <112> directions normal to the film. After sputter cleaning, Ag was deposited on one side of the TiAI thin films. Auger spectra were obtained from these films over a wide range of sputter/anneal conditions. The Al and Ti concentrations were analyzed as well as the important impurity elements, S, Ar, C, N and O. Using the present data and existing knowledge of the microstructure and crystallography of PST TiAI, the potential of this material for providing a detailed understanding of the atomistic mechanisms of interface diffusion is analyzed.

Initial growth processes of hydrogenated microcrystalline silicon (μc-Si:H) films have been investigated by scanning tunneling microscopy (STM), high-resolution transmission electron microscopy (HRTEM), and reflection high energy electron diffraction (RHEED). The μc-Si:H films were prepared by plasma enhanced chemical vapor deposition (PECVD) on H-terminated Si(111) and plasma-oxidized SiO2/Si(111) surfaces that were made atomically-flat by a careful wet processing. On H-terminated Si(111) the initial growth was epitaxial as evidenced by HRTEM and RHEED, while on SiO2/Si(111) the initial process was nucleation of amorphous Si followed by formation of randomly oriented μc-Si:H structure. STM observation revealed that, on both H-terminated and SiO2-terminated surfaces, initial growth processes proceed through the nucleation-and-coalescence mechanism.

We have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.