We report on the incorporation of molybdenum into tungsten oxide by co-sputtering and its effect on solar-powered photoelectrochemical (PEC) water splitting. Our study shows that Mo incorporation in the bulk of the film (WO3:Mo) results in poor PEC performance when compared with pure WO3, most likely due to defects that trap photo-generated charge carriers. However, when a WO3:Mo/WO3 bilayer electrode is used, a 20% increase of the photocurrent density at 1.6 V versus saturated calomel reference electrode is observed compared with pure WO3. Morphological and microstructural analysis of the WO3:Mo/WO3 bilayer structure reveals that it is formed by coherent growth of the WO3:Mo top layer on the WO3 bottom layer. This effect allows an optimization of the electronic surface structure of the electrode while maintaining good crystallographic properties in the bulk.

A three-dimensional (3-D) discrete fracture network (DFN) geo-descriptive model is developed for water conducting features (WCFs) in the sedimentary formations of Horonobe underground research laboratory (URL) in Japan. Fracturing and faulting system in/around the URL area, which is the main investigation area of the Horonobe URL project, is characterized by taking into account borehole geophysical logging data, regional geologic/structural data, and fracture/fault data (orientation, intensity, size) obtained from the surface-based investigations. Volumetric fracture intensity potential is estimated by the correlation and the multi-linear regression analysis of observed data, and is used as one of controls for 3-D DFN model. A regional scale 3-D geo-descriptive DFN model is constructed based on the analyzed fracturing system identified for the WCFs. The current 3-D geo-descriptive model could be utilized explicitly to derive performance assessment (PA) parameters for the hypothetical repository of the high-level radioactive wastes in Japan, and to assist optimization of the safe repository design.

Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of one hundred millimeter diameter, 4H-SiC wafers grown using Physical Vapor Transport (PVT) under specially designed low stress conditions. Such low stress growth conditions have, for example enabled reductions of basal plane dislocation (BPD) densities by two or three orders of magnitude compared to previous levels down to just a few hundred per square centimeter. This provides a unique opportunity to discern details of dislocation behavior which were previously precluded due to complications of image overlap at higher densities. Among the phenomena observed in these studies is the deflection of threading dislocations onto the basal plane producing various stacking fault configurations. Analysis of the contrast from these faults enables determination of their fault vectors which, in turn, provides insight into their possible formation mechanisms.

The synthesis and properties characterization of several PbS1-x Tex x = 0-0.16 samples are presented. Notably it is shown how a local minimum occurs in the thermal diffusivity for the PbS1-x Tex samples at x ≈ 0.03. The thermoelectric properties of doped PbS1-x Tex with x = 0.03 are reported and the properties are compared to the pure PbS and PbTe end members. The electronic contribution to the total thermal conductivity is analyzed for PbS1-x Tex x = 0.03 and it is shown how the lattice thermal conductivity is significantly lowered compared to single crystalline PbS.

Solid-state based battery technology offers, in principle, the largest temperature range (from room temperature to 500 °C) of any battery technology. In fluoride based batteries, the chemical reaction used to create electrical energy is a solid-state reaction of a metal with fluoride anion [1]. Among the various types of solid preparation techniques, the mechanochemical synthesis has been recognized as a powerful route to novel, high-performance, and low-cost materials [2]. Thus, a mixed and highly disordered fluoride phase with retained cubic symmetry can be obtained with a very high Fˉ diffusivity [3].

In our group, a series of new electrolytes was developed, namely LaF3-BaF2-KF solid solutions, using mechanosynthesis method. The cubic structure of the product was confirmed by XRD. The nanoscale nature and morphology of the samples were characterized by SEM and TEM. First Solid-state electrochemical cells were built with LiF based composite cathode, LaF3-BaF2-KF derived electrolyte and Fe based composite anode.

Transition metals doped ZnO are possible candidates for multiferroics. Here, we have investigated the evolution of ferromagnetism due to Co dopants. The magnetic properties have been studied for Co concentrations from 0 to 100% by using ab-initio methods, i.e., KKR Green's function techniques. In order to estimate the Curie temperature we have performed Monte Carlo simulations with ab-initio calculated exchange parameters.

From our calculations the onset of ferromagnetism occurs between 5 to 20% of Co depending on the numerical details of KKR method used. For Co concentrations larger than 50% the system is dominated by antiferromagnetic coupling and no Curie temperature can be obtained.

Stem cell transplantation holds tremendous potential for the treatment of various trauma and diseases. However, the therapeutic efficacy is often limited by poor and unpredictable post-transplantation cell survival. While hydrogels are thought to be ideal scaffolds, the sol-gel phase transitions required for cell encapsulation within commercially available biomatrices such as collagen and Matrigel often rely on non-physiological environmental triggers (e.g., pH and temperature shifts), which are detrimental to cells. To address this limitation, we have designed a novel class of protein biomaterials: Mixing-Induced Two-Component Hydrogels (MITCH) that are recombinantly engineered to undergo gelation by hetero-assembly upon mixing at constant physiological conditions, thereby enabling simple, biocompatible cell encapsulation and transplantation protocols. Building upon bio-mimicry and precise molecular-level design principles, the resulting hydrogels have tunable viscoelasticity consistent with simple polymer physics considerations. MITCH are reproducible across cell-culture systems, supporting growth of human endothelial cells, rat mesenchymal stem cells, rat neural stem cells, and human adipose-derived stem cells. Additionally, MITCH promote the differentiation of neural progenitors into neuronal phenotypes, which adopt a 3D-branched morphology within the hydrogels.

Here we report an epoch-making simple fabrication for wrinkle formation. The present wrinkle formation process is a solution for controlling the area, shape and direction of wrinkle area by forming wrinkles on the liquid state polydimethylsiloxane directly exposed to sputtered metal particles in the low vacuum plasma chamber in various vacuum states and deposition conditions. Also the process allows us to make extremely flexible metal thin film electrode with approved adhesion. These bring us possibilities of actual electrical and biological applications.

The effects of hydrogen chloride (HCl) on the growth of silicon nanowires by Chemical Vapour Deposition are investigated. HCl is found to enable the growth of small diameter gold-catalyzed silicon nanowires while reducing the kink occurrence. Specific growth sequences are presented in order to obtain a one-to-one ratio of nanowire growth versus gold colloidal seed. Other growth sequences using HCl are illustrated but achieve mixed results concerning the nanowire structure and the surface state.

The mechanism of oxide polishing at low pH in the presence of an organic cation is discussed. The role of the cation is thought to involve increasing the nucleophilicity of the silanolate active site on the particle surface by lowering the hydration state. Additionally, the activation energy of the reaction may be lowered by charge attraction between the particle and wafer surface and by increased hydrophobic interactions.

Here we report a general route to prepare silica nanocomposite gels doped with fluorescent single walled carbon nanotubes (SWNT). We show that tetramethylorthosilicate (TMOS) vapors can be used to gel an aqueous suspension of surfactant-wrapped SWNT while maintaining fluorescence from the semiconducting nanotubes. The vapor phase silica process is performed at room temperature and is simple, reproducible, relatively quick, and requires no dilution of SWNT dispersions. However, exposure of aqueous SWNT suspensions to TMOS vapors resulted in an acidification of the suspension prior to gelation that caused a decrease in the emission signal from sodium dodecylsulfate (SDS) wrapped SWNT. We also show that although the SWNT are encapsulated in silica the emission signal from the encapsulated SWNT may be attenuated by exposing the nanocomposites to small aromatic molecules known to mitigate SWNT emission. These results demonstrate a new route for the preparation of highly luminescent SWNT/silica composite materials that are potentially useful for future sensing applications.

We report an ultraviolet photoelectron spectroscopy study of the energetics at the interface between acid oxidised carbon nanotubes and the archetypical molecular N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'diamine(TPD). Electrical equilibrium is achieved across both interfaces within the experiment time frame due to the formation of an interfacial dipole layer which abruptly shifts the vacuum level at the interface. To the authors knowledge this is the first reported measurement of the electronic structure of a carbon nanotube / organic semiconductor interface; a system in which the magnitude of the dipole layer formed at the interface upon contact formation is proportional to the difference in work function between the substrate and organic semiconductor overlayer.

This work aims to investigate the influence of tempering temperature in the wear resistance of AISI T15 HSS tools produced by two different sintering processes – hot isostatic pressing (HIP) and liquid phase vacuum sintering. All materials are submitted to annealing at 870°C, quenching at 1210°C and triple tempering at 540, 550 and 560 °C. Density measurements, hardness and bend strength (transversal rupture strength – TRS) tests are accomplished. To identify the present phases and to evaluate the obtained microstructures, analysis in optical microscopy, SEM and EDX are done. Interchangeable inserts are manufactured by electrical discharge machining process. Frontal machining without coolant of normalized AISI 1045 steel plates is employed. The cutting forces are monitored via a transducer basically constituted of an instrumented table with four load cells mounted with “Strain Gages” sensors capable to measure the cutting efforts. The tools wear is analyzed and used to estimate the performance of two different HSS tools. For both investigated materials, the tools tempered at 540 °C show the lowest wearing.

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

We demonstrate light emitting devices based on ZnO nanoparticles and realized without any additional organic support layers. Pure ZnO devices showed electroluminescence in the visible and the UV spectral range at voltages below 10 V. In order to facilitate hole injection and to stabilize device operation, additional p-type inorganic support layers were introduced. Sputtered NiO layers are shown to improve the stability of the device and its I/V behavior. First bilayer devices consisting of a layer sequence of p-doped Si and naturally n-doped ZnO nanoparticles revealed promising electro-luminescence results with a high contribution in the UV spectral range at reduced current densities.

In this report, electrical properties of an organic memory device with a tri-layer structure, MoO3 nano-clusters layer sandwiched between Alq3 thin films, are investigated. The device using this kind of structure exhibits a large ON/OFF density current ratio over 104, long retention time over 1hr, and an electrically programmable character. The formation of the bistable resistance switching of the device originates from a charge trapping effect of the MoO3 nano-clusters layer. Moreover, current density-voltage (J-V) characteristics of the device are quite different from those of OBDs using MoO3 nano-particles. No negative differential resistance is observed in the J-V curve of the device. This may be due to the distinct surface morphology of the MoO3 layer on the Alq3 thin film.

In this work we study the elastic-plastic transition of the spatially extended polycrystalline austenitic stainless steel 304 (SEPC-ASS-304) advanced materials during an irreversible deformation process. Such transition was characterized by means of the fractal dimension computed of a sequence of digital images of the mesostructure of the SEPC-ASS-304 surface, obtained during the elastic-plastic transition. Our results show a correlation between the fractal dimension and the evolution of the granular flow during the deformation of such advanced material.

Cubic 3C-SiC is regarded as a perfect material for medium power MOSFETs with blocking voltages of around 1500V and current handling of 100A and more. One of the main issues to realize such power MOSFETs is the improvement of the MOS gate to ensure low on-state resistance operation.

The benefits of the implementation of an advanced oxidation process combining PECVD SiO2 deposition and short post-oxidation steps in wet oxygen has been previously demonstrated [1]. The concentrations of fixed and mobile charges in the oxide and at the SiO2/SiC interface were significantly reduced. But the optimization of the gate material is still an issue.

The experiences from silicon technology point in the direction of using a poly-Si gate for MOS controlled devices. Significant improvements in terms of gate oxide reliability could be achieved by applying a poly-Si gate. But the usage of hydrogen for passivation of defects in oxides grown on 3C-SiC gives restrictions to the poly-Si deposition and activation process conditions. A reduced thermal budget is required to preserve the high electrical properties of the oxide.

We investigated the electrical properties of MOS structures prepared with poly-Si gates. The poly-Si layer was deposited by the LPCVD technique mixing Si2H6 and PH3 at 380°C. The poly-Si activation has been carried out with five different methods. The influence of the following two main parameters has been considered: the process duration (thermal annealing or rapid thermal annealing) and the gas atmosphere (argon, dry or wet oxygen).

MOS capacitors were fabricated on the oxidized free-standing n-type 3C-SiC (001) wafers with 5μm low nitrogen doped (5×1015 cm-3) epitaxial layers. The MOS capacitors were characterized on the wafer level (about 200 MOS structures per wafer) by capacitance-conductance-voltage (C-G-V) measurements using a HP4284A LCR meter in the frequency range of 100 Hz to 1 MHz. The measurements were performed at room temperature in a light-tight and electrically shielded environment. The interface trap densities Dit were extracted by the conductance method. To assess the oxide reliability, time-zero dielectric breakdown (TZDB) measurements were conducted on the fabricated MOS structures.

The optimized poly-Si activation process based on RTA in argon has minimal thermal budget and preserves the oxide and interface quality. The fabricated MOS structures demonstrate high electrical properties and reliability of the oxide: A small negative flat band voltage shift of -1V and an interface state density Dit of 7.4×1010 eV-1cm-2 at 0.63 eV below the conduction band. The TZDB measurements revealed an average breakdown electric field of 9.4 MV/cm.

An analytical study of the dependence of shear and von-Mises stress distributions, which develop during PVT (Physical Vapor Transport) growth of 4H-SiC, has been executed. The key parameters investigated include thermal conditions of the crystal growth and parameters of the growing boule geometry. The evaluation was conducted via a 24 full factorial DOE (Design of Experiments). Parameters of the growing boule geometry, i.e. seed diameter, growth front height, inclination angle and height of the side surface were set as the DOE factors, while responses were calculated using numerical simulations. It is found that unique SiC boule growth conditions, which simultaneously minimize both the shear stress and von Mises stress magnitudes, cannot be achieved. Optimization of the shear stress distribution favors longer SiC boules with small seed diameters, small expansion angles and flat growth fronts. Alternatively, optimization of von-Mises stress favors short crystals with small seed diameters and small expansion angles but with curved growth fronts. Consequently, optimization of stress components in SiC crystals involves careful investigation of the interaction and compromise of the reaction cell geometry and growth conditions.

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in many areas and the most important application is in active matrix liquid crystal display. However, the instability of the a-Si:H TFTs constrains their usability. These TFTs have been annealed at higher temperatures in hope of improving their electrical performance. But, higher anneal temperatures become a constraint when the TFTs are grown on polymer-based flexible substrates. This study investigates the effect of anneal time on the performance of the a-Si:H TFTs on PEN. Thin-film transistors are annealed at different anneal times (4 h, 24 h, and 48 h) and were stressed under different bias conditions. Sub-threshold slope and the off-current improved with anneal time. Off-current was reduced by two orders of magnitude for 48 hours annealed TFT and sub-threshold slope became steeper with longer annealing. At positive gate-bias-stress (20 V), threshold voltage shift (∆Vt) values are positive and exhibit a power-law time dependence. High temperature measurements indicate that longer annealed TFTs show improved performance and stability compared to unannealed TFTs. This improvement is due to reduction of interface trap density and good a-Si:H/insulator interface quality with anneal time.