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106117 results in Materials Science

Page 280 of 5306

  • Aberration-corrected self-interference of split higher order Laue zone line for measuring the z-dependent strain profile

  • Mana Norouzpour, Rodney Herring
  • Journal:
    Journal of Materials Research / Volume 32 / Issue 5 / 14 March 2017
    Published online by Cambridge University Press:
    16 January 2017, pp. 996-1008
    Print publication:
    14 March 2017

  • A common characteristic in semiconductor nanostructures is the lattice strain originating from the lattice mismatch between layers of different compositions. Three-dimensional strain measurement in crystals using transmission electron microscopy (TEM) techniques has been the subject of intense works for decades. This information is required for the strain-bandgap engineering being used by our current fast computers and necessary for future quantum computers. However, the missing information was the 3rd dimension that is the atomic displacement and how it changes along the electron-beam direction. The strain information along the electron-beam direction is in the phase of the diffracted beam, which has been obtained recently by the novel technique of self-interference of split higher order Laue zone line (SIS-HOLZ). SIS-HOLZ has been made possible by the correction of the beam aberrations having its analytical and experimental details reported here for the atomic displacement profile existing at the interface of a Si and Si/Si0.8Ge0.2 superlattice.

  • The effect of radio frequency power on the structural and optical properties of a-C:H films prepared by PECVD

  • Yequan Xiao, Xinyu Tan, Lihua Jiang, Ting Xiao, Peng Xiang, Wensheng Yan
  • Journal:
    Journal of Materials Research / Volume 32 / Issue 7 / 14 April 2017
    Published online by Cambridge University Press:
    16 January 2017, pp. 1231-1238
    Print publication:
    14 April 2017

  • Hydrogenated amorphous carbon (a-C:H) films with a designed buffer layer of amorphous hydrogenated silicon carbide on the substrates were fabricated by plasma enhanced chemical vapor deposition (PECVD). The effect of radio frequency (RF) power on the structural and optical properties of a-C:H films was investigated. The ratios of sp 3 to sp 2 of carbon atoms and hydrogen contents in the RF power range of 75–175 W are determined and a similar trend as a function of power. The increase of sp 3 to sp 2 ratio leads to the increase of transmittance and optical gap of a-C:H films. a-C:H film under an RF power of 175 W possesses high transmissive ability (>80%) in the visible wave length, even the highest transmittance value of about 94.2% is achieved at the wave length 550 nm. These results show the optimal a-C:H films which are promising for the applications in the area of solar cells acting a window layer and antireflection layer.

Page 280 of 5306