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It has become increasingly recognized [1] that “photonic integration” is an important next step in the evolution of computing, telecommunications, sensing, transportation, medical, defense, and entertainment technologies. Such integration permits the best features of electronics and photonics to be exploited for information technology applications. There are important technological drivers of photonic/electronic integration, including realization of improved bandwidth and thermal management – transporting and manipulating information using photons avoids the high-frequency resistive losses and heating associated with movement of electrons in metal. Photonic/electronic integration is also evolving to include “chipscale” integration wherein both electronic and photonic circuitries are integrated on to the same chip, analogous to complementary metal-oxide semiconductor (CMOS) electronic integration, which has revolutionized computing. Potential advantages of chipscale integration include far-reaching improvements in size, weight, power consumption, performance, reliability, and cost. While chipscale photonic/electronic integration is not likely to be monolithic, as in CMOS electronic integration, and the problems to be faced will certainly be challenging, there can be little doubt that it will ultimately occur and will have considerable societal and economic impact. Such integration has been greatly advanced by recent developments in the field of silicon photonics, plasmonics, and metamaterial device architectures [2 to 21]. For example, the high index of refraction of silicon has permitted a striking reduction in the size of photonic circuits, making the dimensions of these circuits more compatible with chipscale integration. Further reductions in circuit dimensions appear possible by exploiting plasmonics.
A key component of photonic/electronic integration is the interconversion of signals between the electronic and photonic domains. This is where electro-optics comes into play. An electro-optic (EO) material is one in which the electrical fields associated with photons and electrons can communicate through a highly hyperpolarizable (easily perturbed by electric fields) charge distribution. For an electro-optic material to be optimum for the transduction of electronic signal information into photonic signal information, the charge distribution should be easily perturbed by small electric field potentials (ideally by millivolt electric field potentials to minimize power consumption) and should have very fast (ideally femtosecond) response to time-varying electrical fields. It is these features that have attracted attention to organic EO materials. The fundamental response time of conjugated π-electron systems is the phase relaxation time and is almost universally of the order of tens of femtoseconds.
In the preceding chapters, an introduction has been provided into the fundamentals and state-of-the-art of organic nonlinear optical materials and devices with particular emphasis on electro-optic, second-harmonic generation, difference-frequency generation, optical rectification, and photorefractive materials, devices, and applications related to organic second-order nonlinear optical materials. Organic electro-optic materials exhibit extremely attractive features with respect to temporal response to time-varying electric fields and with respect to the magnitude of second-order optical nonlinearity, which can translate into energy-efficient devices. Organic materials also are attractive in providing a wide variety of processing options including crystal growth (from solution, melt, and vapor phase), sequential synthesis/self-assembly (both Langmuir–Blodgett and Merrifield methods), electric field poling of macromolecular materials near their glass transition temperature, and even laser-assisted electric field poling. Organic materials are amendable to nano-imprint lithography, leading to stamping out complex circuitry, and they are amenable to lift-off techniques for production of conformal and flexible devices. Organic second-order nonlinear optical materials are compatible with a wide variety of materials including semiconductors, metal oxides, and metals; this feature greatly facilitates the production of hybrid devices including those based on silicon photonics, plasmonics, photonic crystals, and metamaterials. They have been integrated into stripline and resonant device structures, cascaded prism device structures, and even structures for slow wave propagation. The low dielectric constants of organic electro-optic materials can also be an advantage for certain applications such as sensing.
Of course, there is a great diversity of organic nonlinear optical materials with a corresponding diversity of properties. However, organic second-order nonlinear optical materials do not typically possess the extremely low optical loss and high optical damage threshold of crystalline inorganic materials. Nevertheless, they frequently exhibit lower optical loss than inorganic electro-absorptive materials and much higher dielectric breakdown properties than semiconductor materials.
The performance properties of organic nonlinear optical materials continue to evolve at a significant rate. However, the commercialization of organic nonlinear optical materials is very limited and immature relative to inorganic materials, and thus the cost of devices based on organic materials does not benefit from large-scale production. Moreover, device engineering utilizing organic nonlinear optical materials is relatively immature compared with the device engineering focused on inorganic materials.
The chemical diversity of organic semiconductors coupled with the kinetic nature of film formation make it challenging to tune the structure of active-layer thin films in organic electronics across multiple length scales. We review techniques to tune aspects of film structure within a framework that accounts for the competition between the time available for structural development and the time required by the organic semiconductors to order, defined by a dimensionless time, τ, that describes the ratio of these two quantities. By considering these two competing time scales, we propose general guidelines to tune the film structure accordingly.
While literally the word photorefraction may describe all kinds of photo-induced changes of the refractive index of a material and therefore any photo-induced phase grating would belong to this category, it has become customary in the literature to consider only a smaller class of materials as being photorefractive. These materials possess two important properties: they are photoconductive and exhibit an electro-optic effect. Photoconductivity ensures charge transport, resulting in the creation of a space-charge distribution under inhomogeneous illumination. The electro-optic effect translates the internal electric fields induced by the inhomogeneous space-charges into a modulation of the material refractive index. This is the main mechanism for photorefraction in inorganic and organic crystals [1]. In polymers and liquid crystals, the concept of photorefraction has been expanded to include refractive index changes governed by a field-assisted molecular reorientation of the chromophores. The photorefractive effect is also distinguished from many other mechanisms leading to optically induced refractive index gratings by the fact that it is an intrinsically non-local effect, in the sense that the maximum refractive index change does not need to occur at the spatial locations where the light intensity is largest.
In the strict sense mentioned above, the photorefractive effect was first observed in the mid-1960s by Ashkin and co-workers [2]. They found that intense laser radiation focused on ferroelectric LiNbO3 and LiTaO3 crystals induced semi-permanent index changes. This phenomenon was unwanted for their purposes, and therefore they referred to it as “optical damage”. However, the potential of this new effect for use in high-density optical storage of data was soon realized by Chen and co-workers [3]. The effect later became known as the photorefractive effect, and it is understood as a modulated refractive index change. Although the photorefractive effect was first discovered in inorganic-ferroelectric materials, in the past few years highly polarizable and photoconductive organic crystals and polymeric materials with extended π-electron systems have presented themselves as possible candidates for photorefractive applications.
The photorefractive process, which culminates with the formation of the phase grating, is described by the mechanisms shown in the schematic diagram of Fig. 11.1. The three most important properties that a material must fulfill are depicted in the figure in the shaded boxes: optical absorption, charge transport, and electro-optic effect or field-assisted molecular reorientation.
First principles density functional theory calculations were conducted to investigate the structures and energetics of polyhedral oligomeric silsesquioxane (POSS) molecules with varying aluminum and alkali (sodium or potassium) concentrations. Notable trends emerge from this study namely, (1) the thermodynamic stability of the substituted POSS molecules is critically dependent on the interplay between size and composition of the POSS structures, and (2) larger POSS structures provide lower central electron density and hence better accommodate the central alkali atom. These observations, when viewed in the context of aluminosilicate based geopolymers, provide fundamental insights into the relations that describe the structure composition interplay of their underlying monomers.
As discussed in Chapter 2, there are many different possibilities for converting optical frequencies to other frequencies or even static fields in second-order nonlinear optical materials, such as sum- and difference-frequency generation, including second-harmonic generation and optical rectification (see Fig. 2.2). The big advantage of organic nonlinear optical materials compared with inorganic ones is high nonlinear optical figures-of-merit, reflecting their almost purely electronic response to external fields, as discussed in Section 3.2. Because of this, the best organic materials exhibit considerably higher second-order nonlinear optical susceptibilities compared with the best inorganic materials. This is illustrated in Fig. 10.1, which shows figures-of-merit for second-harmonic generation d2/n3 versus transparency range for various organic and inorganic crystals. One can clearly see that the nonlinear optical figures-of-merit of organic materials can be several orders of magnitude higher than in the best inorganic materials. This makes organic materials extremely attractive for nonlinear optical applications.
In the 1980s, the most attractive frequency conversion applications included frequency doubling because of the above advantages and because of the interest in generating blue or green coherent light by using widely available (near-)infrared laser sources, such as diode lasers [1], Ti:sapphire lasers, and Nd:YAG lasers. The early organic materials considered were transparent in the visible. Later on, organic materials with much higher nonlinear optical susceptibilities were developed, but these are no longer transparent in the visible (see Fig. 10.1) and therefore second-harmonic generation with these materials is of limited applicability. At present, the most attractive frequency-conversion applications with organic materials include infrared and far-infrared light generation, as well as generation of electromagnetic waves in the THz frequency range. In this section we mainly describe infrared frequency conversion possibilities with the best organic crystals, such as DAST, DSTMS, and OH1 (see Chapter 6 for details on these materials), and in the next section we look at THz generation with these and other organic materials.
A facile synthesis method was adapted to prepare Ortho-chloropolyaniline/graphite oxide (OPANI/GO) composites. The properties of these composites have been discussed based on different characterizations such as scanning electron microscopy, FTIR, and dielectric studies. The important peaks of benzenoid and quinoid rings in the spectrum confirm the formation of composites. Scanning electron microscopic studies indicate that the morphology of the prepared composites was influenced by different weight ratios of GO in OPANI and the resulting micrographs of these composites exhibited flaky and folded structures. The electrical conductivity study was carried out and found that 6 wt% of GO in PANI shows high conductivity value of 20 × 10−2 S/cm. The obtained results suggest an easy approach to prepare such novel nanocomposites with excellent dielectric properties which can be used in many technological applications.
Liquid film migration (LFM) in the fiber laser welded Inconel 617 joint was investigated. The results show that the LFM occurs in HAZ of the laser welded Inconel 617 joint. The element of Mo in the migrated region is slightly richer than that in the adjacent matrix. The diffusional coherency strain due to the lattice mismatch between the element of Mo and the matrix atom is the dominant factor contributing to the occurrence of LFM in HAZ of laser welded Inconel 617. The migration of the liquid film is promoted by the thin initial liquid film and the slow cooling rate in large heat input. LFM tends to occur on the grain boundary (GB) with the fine particles and the GB-resolidified particles are formed on the GB with the large particles. Liquation cracking is reduced in the welds with the high heat input and in the solution treatment condition by LFM (1100 °C/1 h).
The present investigation aims to enhance the mechanical properties and shape memory characteristics of Cu–Ni–Al shape memory alloys (SMAs) by alloying additional elements. These additions were found to control the phase morphology and grain size, along with the formation of different volume fractions, sizes, and distributions of precipitates. The features of the precipitates were mainly dependent on the type of alloying element. It was found that a Co (1.14 wt%) alloy gave the best overall improvement in terms of the transformation temperatures, ductility, and shape memory recovery. These improvements were mainly due to the exceptionally high presence of the γ2 phase in the microstructures of the modified alloy. The results of the current investigation were analyzed and compared to those of previous studies related to Cu–Al–Ni SMAs.
A nanoscale and pure, olivine-structured LiFePO4 was synthesized at ∼300 °C using an organic–inorganic steric entrapment method. Normally, when calcined and crystallized in air, this method leads to the synthesis of compounds where the cations are in their highest oxidation state. However, in this study, we found a way to produce compounds having lower oxidation states (e.g., compounds containing Fe2+), which may have wider applications in the synthesis of other compounds with complex chemistry that have variable oxidation states and, therefore, potential applications in electronic ceramics. The resulting LiFePO4 or (Li2O·2FeO·P2O5) was characterized by thermogravimetric analysis/differential thermal analysis, x-ray diffractometry, scanning electron microscopy, transmission electron microscopy, inductively coupled plasma emission spectroscopy, specific surface area by Brunauer–Emmett–Teller nitrogen absorption, and particle size analysis.
Single-phase crystalline ZnSnP2 nanowires have been prepared via simple chemical vapor deposition method using powdered Zn and SnP3 as the precursors in a custom-built tube furnace reactor. The sublimed precursors were allowed to react with thermally evaporated Sn nanoparticles to yield ZnSnP2 nanowire films over areas of 40 mm2. The cumulative observations suggest that the Sn nanoparticles served both as the growth seed and main contributor of Sn. Prolonged growth time favored formation of Zn3P2 nanowires when the Sn supply was exhausted. For optimal growth conditions, surface and bulk elemental analyses showed homogenous elemental distribution of Zn, Sn, and P, with chemical composition close to 1:1:2 stoichiometry. Powder x-ray diffraction data and Raman scattering of the nanowire films along with single-nanowire analysis using high-resolution transmission electron microscopy indicated that the as-prepared ZnSnP2 nanowires possessed a sphalerite crystal structure, as opposed to the antisite defect-free chalcopyrite structure. Photoelectrochemical measurements in aqueous electrolyte showed that the as-prepared ZnSnP2 nanowires are capable of sustaining stable cathodic photoresponse under white light illumination. Overall, this study presented a benign and straightforward approach to prepare single-phase Zn-based phosphide nanowires suitable for energy conversion applications.
The axial loading test was performed to investigate the effect of carburizing on crack initiation and growth behaviors of a gear steel under high cycle fatigue (HCF) and very high cycle fatigue (VHCF). As a result, the carburized gear steel exhibits the duplex S–N characteristics associated with different interior failure mechanisms. The failure process in the HCF regime can be described as inclusion → fisheye → final crack growth zone (FCGZ) → momentary fracture zone (MFZ), whereas that in the VHCF regime is described as inclusion → fine granular area (FGA) → fisheye → FCGZ → MFZ. Based on the definition of crack sizes at different transition stages and the evaluation of stress intensity factor, the models for predicting crack initiation and growth lives in the HCF regime and in the VHCF regime were established. The predicted crack initiation life tends to increase with the decrease of stress amplitude. In the VHCF regime, the crack initiation life associated with the FGA size is almost equivalent to the total fatigue life, whereas the crack growth life only occupies a tiny fraction. In view of the good agreement between the predicted and experimental results, the theoretical modeling method based on crack initiation and growth can be well used to predict the fatigue life of carburized steel with the interior inclusion-induced failure in the HCF regime and in the VHCF regime.