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Cu(In,Ga)Se2 (CIGS) semiconductors were prepared by arc melting and the vacuum solid reaction. CIGS nanoparticles were synthesized by the mechanical alloy method. The influences of various ball-milling speeds on phase structures for CIGS nanoparticles were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The crystal structures and unit-cell parameters of CIGS nanoparticles were determined using TREOR program and the least squares method. A Rietveld structural refinement was used to determine the atomic occupations and atomic numbers of CIGS prepared under various ball-milling speeds. The least size of agglomerated CIGS nanoparticles should be around 200 nm. CIGS nanoparticles milled at various milling speeds with a tetragonal chalcopyrite structure were obtained according to XRD analyses. However, Ga content in CIGS depends on milling speeds. Based on the structural refinements, the unit-cell parameters are a = 5.693(8)–5.744(9) Å and c = 11.334(9)–11.524(4) Å with gallium content ranging from 0.3 to 0.5. The atomic occupations are corresponding to the 4a crystal site for Cu atoms, the 4b site for In and the 8d site for Se. Ga prefers to occupy the 4b crystal site.
In order to complete the research on the Fe–Se binary system, the phase structures with selenium contents from 50 to 60 at.% have been studied. Fe–Se binary samples used in this study were prepared by the high-temperature solid-state reaction method, and the phase structure of each sample was determined by powder X-ray diffraction. The solid solubility of the Fe3Se4 phase was determined to be from 56.1 to 57.6 at.% Se based on the values of unit-cell parameters. Magnetic properties of the samples were also studied.
The c-oriented La1.8Sr0.2CuO4 and La1.9Sr0.1CuO4 bilayer films were deposited on (001) SrTiO3 single-crystal substrates by using the pulsed laser deposition technique. The effects of deposition parameters on the quality of thin films were investigated. The crystal structures and surface morphologies were characterized by means of XRD and SEM, and the results showed that an as-prepared film deposited with the optimized parameters has high quality. Then La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers structure was prepared using the optimized parameters for each corresponding layer, and the electrical transport properties were measured. Interesting rectifying properties were observed at both room and low temperatures, and the rectifying ratio at low temperature was found to be much higher than that at room temperature.
Nanostructuring is one of the effective approaches to lower the thermal conductivity of thermoelectric materials for improving its figure of merit. The nano-sized uniform skutterudite Co1−xNixSb3 (x = 0, 0.05, 0.075, 0.125, 0.15, and 0.25) thermoelectric powders were synthesized in triethylene glycol solution by using CoCl2, NiCl2, and SbCl3 as precursors and NaBH4 as the reductant. Different synthesis conditions were studied to pursue pure and uniform skutterudite CoSb3 powders. The powders were characterized by X-ray diffraction, field emission scanning electron microscope, and energy-dispersive X-ray analysis. Experimental results show that a Ni-doped skutterudite Co1−xNixSb3 single phase was obtained at 290 °C for 12 h. The powders are spherical, small, and uniform. As x increases from 0 to 0.25, the unit-cell parameter a increases from 0.9044 to 0.9065 nm and the particle size increases from 10 to 30 nm.
Ni nanowire arrays were prepared by electroplating using anodic aluminum oxide templates, and a magnetic field was applied during the electroplating process. The effects of an applied magnetic field on the texture and magnetic properties of the Ni nanowire arrays were studied. The results show that the (110) texture is formed in the nanowires prepared in different magnetic fields. However, the applied magnetic field during electroplating can affect the texture degree, and there exists a suitable magnetic field for small diffusion degree of the (110) texture. On the basis of texture characterization, the effects of applied magnetic field on the magnetic properties of Ni nanowire arrays are discussed.
Investigations into the morphology and structural evolvement of nanomaterials are essential for understanding the growth process. Herein, we present meaningful results on crystallinity transformation of β-SiC nanorods at different preparation temperatures using X-ray diffraction. Results of the characterization indicated that both crystallinity and yield of the as-prepared β-SiC nanostructures were enhanced with increasing reaction temperature. Scanning electron microscope and high-resolution transmission electron microscope were further employed to understand detailed structural information of the SiC nanorods obtained at specific temperature. The results may shed light on structural evolvement for fabrication of nanomaterials.
Superconducting qubits are electronic circuits comprising lithographically defined Josephson tunnel junctions, inductors, capacitors, and interconnects. When cooled to dilution refrigerator temperatures, these circuits behave as quantum mechanical “artificial atoms,” exhibiting quantized states of electronic charge, magnetic flux, or junction phase depending on the design parameters of the constituent circuit elements. Their potential for lithographic scalability, compatibility with microwave control, and operability at nanosecond time scales place superconducting qubits among the leading modalities being considered for quantum information science and technology applications. Over the past decade, the quantum coherence of superconducting qubits has increased more than five orders of magnitude, due primarily to improvements in their design, fabrication, and, importantly, their constituent materials and interfaces. In this article, we review superconducting qubits, articulate the important role of materials research in their development, and provide a prospectus for the future as these devices transition from scientific curiosity to the threshold of technical reality.