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The formation of shear bands during hot deformation of a two-phase (α2 + γ) titanium aluminide and its consequences on dynamics softening has been investigated. The starting material consists of a colony of lamellar grains along with the segregated vanadium and niobium which was subjected to hot deformation in the temperature range 1000–1175 °C at the strain rate 10 s−1. Microstructures of the deformed samples indicate that, with increase in the deformation temperature, the orientation of shear bands changes. Moreover, the extent of dynamic recrystallization also increases with deformation temperature. The softening behaviour and crystallographic orientation change within lamellae during hot deformation have been explored. The nucleation of newly recrystallized grains has been observed at twin–parent grain boundary and within the twined γ phase. Lamellae of the γ and α2 phase have been also observed to be twisted and tilted, leading to the band formations under the load, whose mechanisms have also been explored in the present study.
The presence of 6s2 (5s2) lone-pair electrons on the B-site Pb (Sn) in all-inorganic and hybrid halide ABX3 perovskites distinguishes these materials from the familiar tetrahedral semiconductors traditionally employed in optoelectronics and is key to many of their appealing properties. These electrons are stereochemically active, albeit often in a hidden fashion, resulting in unusual and highly anharmonic lattice dynamics that are linked to many of the special optoelectronic properties displayed by this material class. This article describes the connections between this atypical electronic configuration and the electronic structure and lattice dynamics of these compounds. We illustrate how the lone pair leads to favorable bandwidths and band alignments, mobile holes, large ionic dielectric response, large positive thermal expansion, and even possibly defect-tolerant electronic transport. Taken together, the evidence suggests that other high-performing semiconductors may be found among compounds with lone-pair-bearing cations in high symmetry environments and a high degree of connectivity between atoms.
The efficiency of halide perovskite solar cells has progressed rapidly through a series of major breakthroughs. Currently, a certified efficiency of 25.2% has been achieved for a solar cell using a polycrystalline thin film. This is the result of having reached 75% of the Shockley–Queisser limit for single-junction solar cells. However, for further improvements, new breakthrough technologies are required. This article reviews the impact of previous breakthrough technologies on the efficiency of halide perovskite solar cells, based on certified efficiencies. We clarify the current status of halide perovskite solar cells and introduce photon recycling as the next technological innovation for higher efficiencies. Photon recycling keeps the photon concentration inside the light-harvesting layer high, and consequently, leads to open-circuit voltages close to the theoretical value. Although photon recycling has not yet been implemented in real halide perovskite solar cells, three key technologies for implementing it are examined.
Metal-halide perovskite solar cells (PSCs) have become a promising candidate for photovoltaic applications. Current popular organic hole conductors for highly efficient PSCs bring cost and stability issues, which hinder the commercialization of the PSCs. Hole-conductor-free PSCs are attracting great interest because they eliminate the adverse effects of organic hole conductors by transporting holes in the perovskite itself. In this article, we summarize recent progress in conventional, inverted, and printable mesoscopic hole-conductor-free PSCs. Specifically, we emphasize the stunning stability and scale-up manufacturing of printable hole-conductor-free PSCs, discussing their potential from laboratory to market. The causes for hole-conductor-free PSCs’ current low efficiency are also discussed, and are primarily ascribed to energy-level alignment and interface recombination. We believe that the efficiencies of hole-conductor-free PSCs can be enhanced to be comparable with hole-conductor-containing PSCs by interface modification and material design.
Metal-halide perovskites, in particular their nanocrystal forms, have emerged as a new generation of light-emitting materials with exceptional optical properties, including narrow emissions covering the whole visible region with high photoluminescence quantum efficiencies of up to near-unity. Remarkable progress has been achieved over the last few years in the areas of materials development and device integration. A variety of synthetic approaches have been established to precisely control the compositions and microstructures of metal-halide perovskite nanocrystals (NCs) with tunable bandgaps and emission colors. The use of metal-halide perovskite NCs as active materials for optoelectronic devices has been extensively explored. Here, we provide a brief overview of recent advances in the development and application of metal-halide perovskite NCs. From color tuning via ion exchange and manipulation of quantum size effects, to stability enhancement via surface passivation, new chemistry for materials development is discussed. In addition, processes in optoelectronic devices based on metal-halide perovskite NCs, in particular, light-emitting diodes and radiation detectors, will be introduced. Opportunities for future research in metal-halide perovskite NCs are provided as well.
Hydrogen, the simplest of all molecules, made of the simplest of all atoms, is a material that has successfully accomplished many historic missions: it has powered the engines of space rockets and has served in the ammonia-based fertilizer revolution, the iron and steel sector, and electronics manufacturing. But the task of putting hydrogen in the center of the global energy scene has proven tantalizing, perpetually coming closer to materialization, but repeatedly being pushed to the future. Is it possible that the time has arrived for hydrogen to finally come into its own?
Silicon nanowires (SiNWs) were fabricated in a metal-assisted chemical etching method with two steps including dipping silicon wafers in AgNO3/HF solutions and then in H2O2/HF solutions. Grazing incidence X-ray diffraction measurements with a set of incidence angles were carried out on the resulting samples to detect characteristics of silver nanoparticles in the etched silicon. Compared with the uniform size of silver nanoparticles on the surface, the silver nanoparticles in etched silicon were found with size increasing and content decreasing corresponding to the depths. Based on the silver size increasing phenomenon, a detailed supplementary hypothesis about SiNWs formation was proposed about silver disintegration and redeposition in the later stage of silicon etching. For 2, 3, 4, and 8 mM AgNO3 solutions used to study their effect on the SiNWs, it was found that a higher quantity of Ag+ concentration such as 8 mM were not beneficial for producing good quality SiNWs.