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16 - Noninvasive 3D Methods for the Study of Dental Cementum
- from Part II - Protocols
- Edited by Stephan Naji, New York University, William Rendu, Lionel Gourichon, Université de Nice, Sophia Antipolis
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- Dental Cementum in Anthropology
- Published online:
- 20 January 2022
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- 10 February 2022, pp 258-272
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Summary
Non-invasive 3D methods for imaging cementum increments using synchrotron radiation sources are one of the most promising new avenues for cementum research. This technique offers the opportunity to overcome the major caveats to traditional thin section imaging, and provides volumetric datasets of sub-micrometer resolution that can be investigated in new ways. Such studies can unlock the 3D structure of cementum increments, and 3D measures may allow for new inferences on the relationship between cementum growth and life history. However, as a new field of research, synchrotron X-ray imaging of cementum must ensure reproducibility by employing quantitative approaches to develop optimal experimental procedures and settings for imaging cementum in different samples. The quantitative parameter optimisation procedure we introduce in this chapter should form a crucial part of the imaging protocol that we present here, in which we outline the major steps in preparing for, performing and concluding a synchrotron imaging experiment, based on our own experience.
Cosmology with Phase 1 of the Square Kilometre Array Red Book 2018: Technical specifications and performance forecasts
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- Square Kilometre Array Cosmology Science Working Group:, David J. Bacon, Richard A. Battye, Philip Bull, Stefano Camera, Pedro G. Ferreira, Ian Harrison, David Parkinson, Alkistis Pourtsidou, Mário G. Santos, Laura Wolz, Filipe Abdalla, Yashar Akrami, David Alonso, Sambatra Andrianomena, Mario Ballardini, José Luis Bernal, Daniele Bertacca, Carlos A. P. Bengaly, Anna Bonaldi, Camille Bonvin, Michael L. Brown, Emma Chapman, Song Chen, Xuelei Chen, Steven Cunnington, Tamara M. Davis, Clive Dickinson, José Fonseca, Keith Grainge, Stuart Harper, Matt J. Jarvis, Roy Maartens, Natasha Maddox, Hamsa Padmanabhan, Jonathan R. Pritchard, Alvise Raccanelli, Marzia Rivi, Sambit Roychowdhury, Martin Sahlén, Dominik J. Schwarz, Thilo M. Siewert, Matteo Viel, Francisco Villaescusa-Navarro, Yidong Xu, Daisuke Yamauchi, Joe Zuntz
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- Journal:
- Publications of the Astronomical Society of Australia / Volume 37 / 2020
- Published online by Cambridge University Press:
- 06 March 2020, e007
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We present a detailed overview of the cosmological surveys that we aim to carry out with Phase 1 of the Square Kilometre Array (SKA1) and the science that they will enable. We highlight three main surveys: a medium-deep continuum weak lensing and low-redshift spectroscopic HI galaxy survey over 5 000 deg2; a wide and deep continuum galaxy and HI intensity mapping (IM) survey over 20 000 deg2 from $z = 0.35$ to 3; and a deep, high-redshift HI IM survey over 100 deg2 from $z = 3$ to 6. Taken together, these surveys will achieve an array of important scientific goals: measuring the equation of state of dark energy out to $z \sim 3$ with percent-level precision measurements of the cosmic expansion rate; constraining possible deviations from General Relativity on cosmological scales by measuring the growth rate of structure through multiple independent methods; mapping the structure of the Universe on the largest accessible scales, thus constraining fundamental properties such as isotropy, homogeneity, and non-Gaussianity; and measuring the HI density and bias out to $z = 6$ . These surveys will also provide highly complementary clustering and weak lensing measurements that have independent systematic uncertainties to those of optical and near-infrared (NIR) surveys like Euclid, LSST, and WFIRST leading to a multitude of synergies that can improve constraints significantly beyond what optical or radio surveys can achieve on their own. This document, the 2018 Red Book, provides reference technical specifications, cosmological parameter forecasts, and an overview of relevant systematic effects for the three key surveys and will be regularly updated by the Cosmology Science Working Group in the run up to start of operations and the Key Science Programme of SKA1.
Glioblastoma Recurrence Versus Treatment Effect in a Pathology-Documented Series
- Benjamin T. Himes, Andrea L. Arnett, Kenneth W. Merrell, Marcus J. Gates, Adip G. Bhargav, Aditya Raghunathan, Desmond A. Brown, Terry C. Burns, Ian F. Parney
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- Journal:
- Canadian Journal of Neurological Sciences / Volume 47 / Issue 4 / July 2020
- Published online by Cambridge University Press:
- 20 February 2020, pp. 525-530
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Objective:
Patients diagnosed with glioblastoma (GBM) are treated with surgery followed by fractionated radiotherapy with concurrent and adjuvant temozolomide. Patients are monitored with serial magnetic resonance imaging (MRI). However, treatment-related changes frequently mimic disease progression. We reviewed a series of patients undergoing surgery for presumed first-recurrence GBM, where pathology reports were available for tissue diagnosis, in order to better understand factors associated with a diagnosis of treatment-related changes on final pathology.
Methods:Patient records at a single institution between 2005 and 2015 were retrospectively reviewed. Pathology reports were reviewed to determine diagnosis of recurrent GBM or treatment effect. Survival analysis was performed interrogating overall survival (OS) and progression-free survival (PFS). Correlation with radiation treatment plans was also examined.
Results:One-hundred-twenty-three patients were identified. One-hundred-sixteen patients (94%) underwent resection and seven underwent biopsy. Treatment-related changes were reported in 20 cases (16%). These patients had longer median OS and PFS from the time of recurrence than patients with true disease progression. However, there was no significant difference in OS from the time of initial diagnosis. Treatment effect was associated with surgery within 90 days of completing radiation. In patients receiving radiation at our institution (n = 53), larger radiation target volume and a higher maximum dose were associated with treatment effect.
Conclusion:Treatment effect was associated with surgery nearer to completion of radiation, a larger radiation target volume, and a higher maximum point dose. Treatment effect was associated with longer PFS and OS from the time of recurrence, but not from the time of initial diagnosis.
Engaging emergency clinicians in emergency department clinical research
- Andrew D. McRae, Jeffrey J. Perry, Jamie Brehaut, Erica Brown, Janet Curran, Marcel Emond, Corinne Hohl, Monica Taljaard, Ian G. Stiell
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- Journal:
- Canadian Journal of Emergency Medicine / Volume 20 / Issue 3 / May 2018
- Published online by Cambridge University Press:
- 30 January 2018, pp. 443-447
- Print publication:
- May 2018
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Objective
The objective of this panel was to generate recommendations to promote the engagement of front-line emergency department (ED) clinicians in clinical and implementation research.
MethodsPanel members conducted semi-structured interviews with 37 Canadian adult and pediatric emergency medicine researchers to elicit barriers and facilitators to clinician engagement in research activities, and to glean strategies for promoting clinician engagement.
ResultsResponses were organized by themes, and, based on these responses, recommendations were developed and refined in an iterative fashion by panel members.
ConclusionsWe offer eight recommendations to promote front-line clinician engagement in clinical research activities. Recommendations to promote clinician engagement specifically address the creation of a research-friendly culture in the ED, minimizing the burden of data collection on clinical staff through the careful design of data collection tools and the use of research staff, and communication between researchers and clinical staff to promote adherence to study protocols.
How to conduct implementation trials and multicentre studies in the emergency department
- Ian G. Stiell, Jeffrey J. Perry, Jamie Brehaut, Erica Brown, Janet A. Curran, Marcel Emond, Corinne Hohl, Monica Taljaard, Andrew D. McRae
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- Journal:
- Canadian Journal of Emergency Medicine / Volume 20 / Issue 3 / May 2018
- Published online by Cambridge University Press:
- 30 January 2018, pp. 448-452
- Print publication:
- May 2018
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Objective
The objective of Panel 2b was to present an overview of and recommendations for the conduct of implementation trials and multicentre studies in emergency medicine.
MethodsPanel members engaged methodologists to discuss the design and conduct of implementation and multicentre studies. We also conducted semi-structured interviews with 37 Canadian adult and pediatric emergency medicine researchers to elicit barriers and facilitators to conducting these kinds of studies.
ResultsResponses were organized by themes, and, based on these responses, recommendations were developed and refined in an iterative fashion by panel members.
ConclusionsWe offer eight recommendations to facilitate multicentre clinical and implementation studies, along with guidance for conducting implementation research in the emergency department. Recommendations for multicentre studies reflect the importance of local study investigators and champions, requirements for research infrastructure and staffing, and the cooperation and communication between the coordinating centre and participating sites.
Summary of the Snowmastodon Project Special Volume A high-elevation, multi-proxy biotic and environmental record of MIS 6–4 from the Ziegler Reservoir fossil site, Snowmass Village, Colorado, USA
- Ian M. Miller, Jeffrey S. Pigati, R. Scott Anderson, Kirk R. Johnson, Shannon A. Mahan, Thomas A. Ager, Richard G. Baker, Maarten Blaauw, Jordon Bright, Peter M. Brown, Bruce Bryant, Zachary T. Calamari, Paul E. Carrara, Michael D. Cherney, John R. Demboski, Scott A. Elias, Daniel C. Fisher, Harrison J. Gray, Danielle R. Haskett, Jeffrey S. Honke, Stephen T. Jackson, Gonzalo Jiménez-Moreno, Douglas Kline, Eric M. Leonard, Nathaniel A. Lifton, Carol Lucking, H. Gregory McDonald, Dane M. Miller, Daniel R. Muhs, Stephen E. Nash, Cody Newton, James B. Paces, Lesley Petrie, Mitchell A. Plummer, David F. Porinchu, Adam N. Rountrey, Eric Scott, Joseph J.W. Sertich, Saxon E. Sharpe, Gary L. Skipp, Laura E. Strickland, Richard K. Stucky, Robert S. Thompson, Jim Wilson
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- Journal:
- Quaternary Research / Volume 82 / Issue 3 / November 2014
- Published online by Cambridge University Press:
- 20 January 2017, pp. 618-634
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In North America, terrestrial records of biodiversity and climate change that span Marine Oxygen Isotope Stage (MIS) 5 are rare. Where found, they provide insight into how the coupling of the ocean–atmosphere system is manifested in biotic and environmental records and how the biosphere responds to climate change. In 2010–2011, construction at Ziegler Reservoir near Snowmass Village, Colorado (USA) revealed a nearly continuous, lacustrine/wetland sedimentary sequence that preserved evidence of past plant communities between ~140 and 55 ka, including all of MIS 5. At an elevation of 2705 m, the Ziegler Reservoir fossil site also contained thousands of well-preserved bones of late Pleistocene megafauna, including mastodons, mammoths, ground sloths, horses, camels, deer, bison, black bear, coyotes, and bighorn sheep. In addition, the site contained more than 26,000 bones from at least 30 species of small animals including salamanders, otters, muskrats, minks, rabbits, beavers, frogs, lizards, snakes, fish, and birds. The combination of macro- and micro-vertebrates, invertebrates, terrestrial and aquatic plant macrofossils, a detailed pollen record, and a robust, directly dated stratigraphic framework shows that high-elevation ecosystems in the Rocky Mountains of Colorado are climatically sensitive and varied dramatically throughout MIS 5.
EMU: Evolutionary Map of the Universe
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- Ray P. Norris, A. M. Hopkins, J. Afonso, S. Brown, J. J. Condon, L. Dunne, I. Feain, R. Hollow, M. Jarvis, M. Johnston-Hollitt, E. Lenc, E. Middelberg, P. Padovani, I. Prandoni, L. Rudnick, N. Seymour, G. Umana, H. Andernach, D. M. Alexander, P. N. Appleton, D. Bacon, J. Banfield, W. Becker, M. J. I. Brown, P. Ciliegi, C. Jackson, S. Eales, A. C. Edge, B. M. Gaensler, G. Giovannini, C. A. Hales, P. Hancock, M. T. Huynh, E. Ibar, R. J. Ivison, R. Kennicutt, Amy E. Kimball, A. M. Koekemoer, B. S. Koribalski, Á. R. López-Sánchez, M. Y. Mao, T. Murphy, H. Messias, K. A. Pimbblet, A. Raccanelli, K. E. Randall, T. H. Reiprich, I. G. Roseboom, H. Röttgering, D. J. Saikia, R. G. Sharp, O. B. Slee, Ian Smail, M. A. Thompson, J. S. Urquhart, J. V. Wall, G.-B. Zhao
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- Journal:
- Publications of the Astronomical Society of Australia / Volume 28 / Issue 3 / 2011
- Published online by Cambridge University Press:
- 02 January 2013, pp. 215-248
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EMU is a wide-field radio continuum survey planned for the new Australian Square Kilometre Array Pathfinder (ASKAP) telescope. The primary goal of EMU is to make a deep (rms ∼ 10 μJy/beam) radio continuum survey of the entire Southern sky at 1.3 GHz, extending as far North as +30° declination, with a resolution of 10 arcsec. EMU is expected to detect and catalogue about 70 million galaxies, including typical star-forming galaxies up to z ∼ 1, powerful starbursts to even greater redshifts, and active galactic nuclei to the edge of the visible Universe. It will undoubtedly discover new classes of object. This paper defines the science goals and parameters of the survey, and describes the development of techniques necessary to maximise the science return from EMU.
Neural Cell Attachment on Metal Ion Implanted Glass Surfaces
- Emel Sokullu-Urkac, Ahmet Oztarhan, Ismet Deliloglu-Gurhan, Sultan Gulce-Iz, Feyzan Ozdal-Kurt, Ian G. Brown
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1354 / 2011
- Published online by Cambridge University Press:
- 07 October 2011, mrss11-1354-ii01-04
- Print publication:
- 2011
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We have explored the application of ion implantation as a tool for the enhancement of neural cell growth on glass surfaces. Glass substrates were ion implanted with gold and with carbon using a metal vapor vacuum arc (MEVVA) ion source-based implantation system at Ege University Surface Modification Laboratory. The implantation dose was varied over the range 1014 – 1017 ions/cm2 and the ion energy spanned the range 20 – 80 keV. B35 neural cells were seeded and incubated on the implanted substrates for 48h at 37°C. After 2-days in culture the cell attachment behavior was characterized using phase contrast microscopy. The adhesion and direct contact of neural cells on these ion implanted glass surfaces were observed
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Performance of Ultra Hard Carbon Wear Coatings on Microgears Fabricated by Liga
- Joel W. Ager III, Othon R. Monteiro, Ian G Brown, David M. Follstaedt, James A. Knapp, Michael T. Dugger, Todd R. Christenson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 546 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 115
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- 1998
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Stiction and friction are of concern for the reliable, long-term application of Ni-alloy micromachines. We have found that the application of a 30 - 70 nm hard carbon coating produces a significant reduction in the friction coefficient and wear rate of electroformed Ni substrates in reciprocating sliding contact under simulated MEMS operating conditions. To evaluate the performance of coated components, a series of 70-μm-thick microgears ranging in diameter from 0.2 to 2.2 mm were fabricated from electroformed Ni via standard LIGA processes and fixtured on posts in preparation for the coating procedure. A pulsed vacuumarc deposition process was used to deposit a carbon coating on the gears with the plasma incident at a shallow angle to the gears' top surface. A sample bias of −2 keV was used in order to produce a coating with relatively low stress and good adhesion while maintaining high hardness. This coating process is known to be somewhat comformal to the component surfaces. The coating uniformity, particularly in the high-aspect-ratio areas between the gear teeth, was evaluated with micro-Raman spectroscopy. It is shown that the coating can be applied uniformly on the top gear surface. Between the gear teeth the coating was the same thickness as on top of the gear down to a point 50 μm below the top surface. Below that point (i.e. between 50 and 70 μm), the coating thickness is somewhat thinner, but is still present. These results demonstrate that it is possible to a deposit hard carbon coating on microgears to reduce friction and wear in micromachines.
Deposition of mullite and mullite-like coatings on silicon carbide by dual-source metal plasma immersion
- Othon R. Monteiro, Zhi Wang, Ian G. Brown
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- Journal:
- Journal of Materials Research / Volume 12 / Issue 9 / September 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2401-2410
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- September 1997
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Mullite and mullite-like coatings on silicon carbide have been produced by a metal plasma immersion ion implantation and deposition (Mepiiid) technique based on two cathodic vacuum arc sources and concurrent pulse biasing of the substrate in an oxygen atmosphere. The deposition was carried out at oxygen partial pressures of between 0.66 and 3.33 Pa. The Al : Si ratio in the films varied from 1 : 1 to 8 : 1 and was controlled by varying the pulse duration of the separate plasma guns. High bias voltage was used early in the deposition process in order to produce atomic mixing at the film-substrate interface, while lower bias voltage was used later in the deposition; low ion energy allows control of the physical properties of the film as well as faster deposition rates. The as-deposited films were amorphous, and crystalline mullite was formed by subsequent annealing at 1100 °C for 2 h in air. Strong adhesion between the mullite and the SiC was achieved, in some cases exceeding the 70 MPa instrumental limit of our pull-tester.
Plasma-Immersion Ion Implantation
- Joseph V. Mantese, Ian G. Brown, Nathan W. Cheung, George A. Collins
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- Journal:
- MRS Bulletin / Volume 21 / Issue 8 / August 1996
- Published online by Cambridge University Press:
- 29 November 2013, pp. 52-56
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- August 1996
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Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.
In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implantation system does not use the extraction and acceleration methods of conventional mass-analyzing implanters. Instead the sample is (usually) repetitively pulsed at high negative voltages (in the 2–300 kV range) to implant the surface with a flux of energetic plasma ions as shown in Figure 1. When the negative bias is applied to a conducting object immersed in a plasma, electrons are repelled from the surrounding region toward the walls of the vacuum chamber, which is usually held at ground potential. Almost all the applied voltage difference occurs across this region, which is generally known as a sheath or cathode fall region. Ions are accelerated across the sheath, producing an ion flux to the entire exposed surface of the work-piece. Because the plasma surrounds the sample and because the ions are accelerated normal to the sample surfaces, implantation occurs over all surfaces, thereby eliminating the need for elaborate target manipulation or masking systems commonly required for beam line implanters. Ions implanted in the work-piece must be replaced by an incoming flow of ions at the sheath boundary, or the sheath will continue to expand into the surrounding plasma.
Plasma densities are kept relatively low, usually between 108 and 1011 ions per cm3. Ions must be replenished near the workpiece by either diffusion or ionization since the workpiece (in effect) behaves like an ion pump. Gaseous discharges with thermionic, radio-frequency, or microwave ionization sources have been successfully used.
Surface-enhanced materials are obtained through PIII by producing chemical and microstructural changes that lead to altered electrical properties (e.g., semiconductor applications), and low-friction and superhard surfaces that are wear- and corrosion-resistant. When PIII is limited to gaseous implant species, these unique surface properties are obtained primarily through the formation of nitrides, oxides, and carbides. When applied to semiconductor applications PIII can be used to form amorphous and electrically doped layers. Plasma-immersion ion implantation can also be combined with plasma-deposition techniques to produce coatings such as diamondlike carbon (DLC) having enhanced properties. This latter variation of PIII can be operated in a high ionenergy regime so as to do ion mixing and to form highly adherent films, and in an ion-beam-assisted-deposition (IBAD)-like ion-energy regime to produce good film morphology and structure.
Mechanical Properties of Amorphous Hard Carbon Films Prepared by Cathodic ARC Deposition
- Simone Anders, André Anders, Joel W. Ager III, Zhi Wang, George M. Pharr, Ting Y. Tsui, Ian G. Brown, C. Singh Bhatia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 383 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 453
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- 1995
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Cathodic arc deposition combined with macroparticle filtering of the plasma is an efficient and versatile method for the deposition of amorphous hard carbon films of high quality. The film properties can be tailored over a broad range by varying the energy of the carbon ions incident upon the substrate and upon the growing film by applying a pulsed bias technique. By varying the bias voltage during the deposition process specific properties of the interface, bulk film and top surface layer can be obtained. We report on nanoindentation and transmission electron microscopy studies as well as stress measurements of cathodic-arc amorphous hard carbon films deposited with varied bias voltage. The investigations were performed on multilayers consisting of alternating hard and soft amorphous carbon.
Film Synthesis on Powders by Cathodic ARC Plasma Deposition
- André Anders, Simone Anders, Ian G. Brown, Igor C. Ivanov
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- Journal:
- MRS Online Proceedings Library Archive / Volume 388 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 215
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- 1995
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Cathodic arc plasma deposition was used to coat Al2O3 powder (mesh size 60) with platinum. the power particles were moved during deposition using a mechanical system operating at a resonance frequency of 20 Hz. Scanning electron microscopy and auger electron microscopy show that all particles are completely coated with a platinum film having a thickness of about 100 nm. the actual deposition time was only 20 s, thus the deposition rate was very high (5 nm/s).
Novel Technique to Produce Strongly Adherent Diamond Films on Fe- and Ni-Base Alloys
- Othon R. Monteiro, Zhi Wang, Ian G. Brown
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- Journal:
- MRS Online Proceedings Library Archive / Volume 416 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 139
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- 1995
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An evaluation of the use of intermediate layers for promoting adhesion between diamond and Fe and Ni base alloys is presented. The lack of adhesion between diamond and such alloys has prevented its use as a protective coating in applications at intermediate temperatures. In this study we use a combination of plasma assisted deposition techniques together with controlled bias of the substrate in order to deposit intermediate layers, and simultaneously achieve a thorough intermixing of the elements at the interface, in order to increase the adhesion between the layers. We have compared the performance of different carbide forming metals, as well as other materials. Properties considered in the selection of the appropriate intermediate layers are: chemical affinity with carbon, thermal expansion coefficient, mechanical properties, and adhesion to diamond and to the base metal as well. In the case of multiple layers, adhesion strength was measured after every new layer was deposited, in order to identify any weak links of the composite structure. Transmission electron microscopy was used to determine the microstructure and phases. An analysis is provided of the resulting performance on the basis of the microstructure.
Low Energy Ion Implantation / Deposition as a Film Synthesis and Bonding Tool
- André Anders, Simons Anders, Ian G. Brown, Igor C. Ivanov
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- Journal:
- MRS Online Proceedings Library Archive / Volume 316 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 833
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- 1993
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We describe a novel means for the production of atomically-bonded thin films of a wide range of materials. The technique is a plasma and ion beam method involving synthesis of the desired surface film by plasma deposition and the simultaneous atomic mixing of the film into the substrate by low energy ion implantation from the surrounding plasma. Vacuum-arc-produced metal plasma is used for the metallic component of the film and gases can be added to form compound films. Multiple plasma generators can be used, and films of single metals, alloys, ceramics and multilayers can be formed. By repetitively pulse biasing the substrate during plasma deposition, the growing film is subjected to energetic ion bombardment, and direct and recoil ion implantation is induced. The depositing film is thereby atomically mixed to the substrate as it is formed. The films are atomically smooth, can be anywhere from a few monolayers to microns in thickness, and the interface or mixed transition zone can be tailored. Here we outline the basic plasma physics of the method and describe a number of novel surfaces which have been formed with excellent properties.
Rare-Earth Doping by Ion Implantation and Related Techniques
- Ian G. Brown
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- Journal:
- MRS Online Proceedings Library Archive / Volume 301 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 39
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- 1993
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Some metal plasma techniques have been developed that provide a convenient means for the doping of semiconductor hosts with rare-earths. These plasma and ion beam tools are based on the application of vacuum arc discharges for the formation of dense rare-earth plasmas which then can be used in a number of ways for doping and otherwise introducing the rare-earths into substrate materials. At the low energy end of the spectrum, the streaming metal plasma can be used for the deposition of thin films, and if more than one plasma source is used then of multilayer structures also. Or by building the vacuum-arc rare-earth plasma generator into an ion source configuration, high current ion beams can be produced for doing high energy ion implantation; alternatively the substrate can be immersed in the streaming rare-earth plasma and by using appropriately phased high voltage substrate pulsing and pulsed plasma generation, plasma immersion ion implantation can be done. Between these two limiting techniques – low energy plasma deposition and high energy ion implantation – a spectrum of hybrid methods can be utilized for rare earth doping. We've made a number of plasma and ion sources of this kind, and we've doped a wide range of substrates with a wide range of rare-earths. For example we've implanted species including Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er and Yb into host materials including Si, GaAs, InP and more. The implantation dose can range from a low of about 1013 cm−2 up to as high as about 1017 cm−2, and the ion energy can be varied from a few tens of eV up to about 200 keV. Here we review these vacuum-arc-based plasma methods for rare-earth doping, describing both the tools and techniques that are available and the applications to which we've put the methods in our laboratory.
Joining of Metal Films to Carbon-Carbon Composite Material by Metal Plasma Immersion Ion Implantation
- André Anders, Simone Anders, Ian G. Brown, Peter Chow
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- Journal:
- MRS Online Proceedings Library Archive / Volume 314 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 205
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- 1993
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Adhesion of metal films to carbon-carbon composite materials is a problem when using conventional techniques such as sputter deposition. Metal plasma immersion ion implantation is a novel technique which in combination with metal plasma deposition can produce metal-tocomposite bonding with very good adhesion characteristics. The substrate is immersed in a metal plasma which is produced by a pulsed vacuum arc. When the substrate is biased to high negative voltage the metal ions are accelerated toward and implanted into the substrate. A repetitively pulsed bias (Its pulses) is used to avoid arcing and other deleterious effects. Between high voltage pulses, metal plasma is deposited onto the surface with an energy typical of vacuum arcs, about 50–100 eV. The underlying idea of this mixed implantation-deposition technique is the formation of an extended substrate-film intermixed layer. We have demonstrated the technique for nickel films on carbon-carbon composite materials.
Formation of Buried Epitaxial Si-Ge Alloy Layers in Si <100> Crystal by High Dose Ge ION Implantation
- Kin Man Yu, Ian G. Brown, Seongil Im
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- Journal:
- MRS Online Proceedings Library Archive / Volume 235 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 293
- Print publication:
- 1991
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We have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.