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Scanning probe microscopy (SPM) has made significant contributions to our understanding of the sub-processes underlying photovoltaic action. These techniques allow local investigation of the electrical and optical properties of a material. Spatially resolved measurements of surface photovoltage and photocurrent have been particularly useful in understanding charge generation and separation. In thin-film inorganic solar cells, for example, Kelvin probe force microscopy (KPFM) has revealed that charge separation does not occur at a heterojunction as expected, but instead occurs at a homojunction buried ∼50 nm within the absorbing layer. In organic photovoltaics, submicron maps of photocurrent have contributed to the understanding of the interplay between processing conditions, blend morphology, and device performance. Such functional imaging distinguishes SPM from complementary structural characterization techniques. Our goal in this article is to provide the materials science community with an appreciation for the capabilities, considerations, and limitations associated with SPM studies of solar cell materials and devices. Highlighted techniques include scanning tunneling microscopy, photoconductive atomic force microscopy, near-field scanning optical microscopy, KPFM, and time-resolved electric force microscopy.
Research in functional materials is frequently driven by a desire to make informed choices in the quest for better, more effective materials. A great deal of recent attention has been focused on the modalities of how such informed choices can themselves be made in a better, more effective manner. The examples presented here examine some of these modalities, emphasizing the nexus between new synthesis, computational design and analysis, growth in high purity forms, and finally, end-use in terms of either application or of significant property measurement. The illustrations, many drawn from the recent literature, commence with the role that theory has played, both in property prediction and concomitant materials selection, in the areas of multiferroics and topological insulators. The importance of materials quality is emphasized, using examples from observation of the fractional Quantum Hall Effect, where new science has emerged as a result of improved materials. In the area of organic electronics, prospects for advancing the field are suggested, as are future directions in nanoscience. While the examples chosen here point to developments that require a highly collaborative “systems” approach to materials, the role that serendipity plays is not ignored.
The design and control of materials properties, often at the nanoscale, are the foundation of many new strategies for energy generation, storage, and efficiency. Scanning probe microscopy (SPM) has evolved into a very large toolbox for the characterization of properties spanning size scales from hundreds of microns to nanometers. Recent advances in SPM involve properties and size scales of precise relevance to energy-related materials, as presented in this issue. These advances are put into the general context of energy research, and the general principles are summarized.
By chemical vapor deposition, aligned single wall carbon nanotubes (SWNTs) and a network of SWNTs are simultaneously grown as the channel and the source–drain electrodes of thin film transistors (TFTs). The increase of aligned SWNTs increases the channel conductance without changing the contact resistance. However, the increase of network-type SWNTs from 19 to 32.5 (SWNTs/μm) decreases the contact resistance fivefold. The contact resistance of all-SWNT TFT is three times lower compared with that of an SWNT TFT using metal electrodes. The all-SWNT TFTs transferred on polyethylene terephthalate (PET) show a transparency of >80% in the visible range of wavelengths.
When ultrafine-grained (UFG) samples are deformed plastically, it is necessary to consider the role of grain boundaries even at the micrometer scale in sample size. We report here the occurrence of intensive grain boundary sliding (GBS) at room temperature in micro-pillars of a UFG aluminum alloy having an unusually high strain rate sensitivity. A consequence of this GBS is that the intermittent flow with detrimental strain avalanches characterizing micro-sized conventional crystals is not present in UFG materials, thereby illustrating a potential for effectively applying these UFG materials in micro-devices.
High-resolution powder X-ray diffraction and density functional plane wave pseudo-potential techniques have been used to obtain an optimized structural model of silver arachidate, [Ag(O2C(CH2)18CH3]2. The unit cell is triclinic, space group P-1 with cell dimensions of a = 4.1519(10) Å, b = 4.7055(10) Å, c = 53.555(4) Å, α = 89.473(15)°, β = 87.617(5)° and γ = 76.329(5)°. The structure is characterized by an 8-membered ring dimer of Ag atoms and carboxyl groups joined by four-member Ag–O rings with fully extended zigzag side chains, giving rise to one-dimensional chains along the b-axis.
National Security Technologies (NSTec) has developed calibration procedures for X-ray imaging systems. The X-ray sources that are used for calibration are both diode type and diode/fluorescer combinations. Calibrating the X-ray detectors is a key to accurate calibration of the X-ray sources. Both energy dispersive detectors and photodiodes measuring total flux were used. We have developed calibration techniques for the detectors using radioactive sources that are traceable to the National Institute of Standards and Technology (NIST). The German synchrotron at Physikalische Technische Bundestalt (PTB) was used to calibrate the silicon photodiodes over the energy range from 50 to 60 keV. The measurements on X-ray cameras made using the NSTec X-ray sources included quantum efficiency averaged over all pixels, camera counts per photon per pixel, and response variation across the sensor. The instrumentation required to accomplish the calibrations is described. The X-ray energies ranged from 720 to 22.7 keV. The X-ray sources produce narrow energy bands, allowing us to determine the properties as a function of X-ray energy. The calibrations were done for several types of imaging devices. There were back and front illuminated CCD (charge-coupled device) sensors, and a CID (charge injection device) type camera. The CCD and CID camera types differ significantly in some of their properties that affect the accuracy of the X-ray intensity measurements. All the cameras discussed here are silicon based. The measurements of the quantum efficiency variation with the X-ray energy are compared to the models for the sensor structure. The cameras that are not back-thinned are compared to those that are.
A software for the calculation of diffraction elastic constants (DEC) for materials both with and without preferred orientation was developed. All grain-interaction models that can use the crystallite orientation distribution function (ODF) are incorporated, including Kröner, Hill, inverse Kröner, and Reuss. The functions of the software include: reading the ODF in common textual formats, pole figure calculation, calculation of DEC for different (hkl,φ,ψ), calculation of anisotropic bulk constants from the ODF, calculation of macro-stress from lattice strain and vice versa, as well as mixture ratios of (hkl) of overlapped reflections in textured materials.
The manufacture of ultra-large scale integration technology can impose significant strain within the constituent metallization because of the mismatch in coefficients of thermal expansion between metallization and its surrounding environment. The resulting stress distributions can be large enough to induce voiding within Cu-based metallization, a key reliability issue that must be addressed. The interface between the Cu and overlying capping layers is a critical location associated with void formation. By combining conventional and glancing-incidence X-ray diffraction, depth-dependent stress distributions that develop in Cu films and patterned features are investigated. In situ annealing and as-deposited measurements reveal that strain gradients are created in capped Cu structures, where an increased in-plane tensile stress is generated near the Cu/cap interface. The interplay between plasticity in Cu and the constraint imposed by capping layers dictates the extent of the observed gradients. Cu films possessing caps deposited at temperatures where Cu experienced only elastic deformation did not exhibit depth-dependent stress distributions. However, all capped Cu samples exposed to temperatures that induce plastic behavior developed greater tensile stress at the Cu/cap interface than in the bulk Cu film after cooling, representing a clear concern for the mitigation of metallization voiding.
Total reflection X-ray fluorescence spectrometry (TXRF) was used to analyze residual surface contamination on Genesis solar wind samples and to evaluate different cleaning methods. To gauge the suitability of a cleaning method, two samples were analyzed following cleaning by lab-based TXRF. The analysis comprised an overview and a crude manual mapping of the samples by orienting them with respect to the incident X-ray beam in such a way that different regions were covered. The results show that cleaning with concentrated hydrochloric acid and a combination of hydrochloric acid and hydrofluoric acid decreased persistent inorganic contaminants substantially on one sample. The application of CO2 snow for surface cleaning tested on the other sample appears to be effective in removing one persistent Genesis contaminant, namely germanium. Unfortunately, the TXRF analysis results of the second sample were impacted by relatively high background contamination. This was mostly due to the relatively small sample size and that the solar wind collector was already mounted with silver glue for resonance ion mass spectrometry (RIMS) on an aluminium stub. Further studies are planned to eliminate this problem. In an effort to identify the location of very persistent contaminants, selected samples were also subjected to environmental scanning electron microscopy. The results showed excellent agreement with TXRF analysis.
Micro-X-ray fluorescence (XRF) analysis provides us with elemental maps that are very useful for understanding the samples under test. Usually, scanning-type elemental mapping is performed. That means a sample stage is scanned to a fixed X-ray microbeam. XRF analysis is performed at the scanned points, leading to 2D elemental mapping. One of the drawbacks of this technique is the long acquisition time depending on the area being mapped and the lateral resolution required. Thus, projection-type elemental mapping has been studied. We have studied the projection type XRF imaging by using a straight polycapillary optic combined with an X-ray CCD camera. To obtain the elemental map, we applied a wavelength dispersive spectrometer (WDS). In this paper, we report a newly developed 2D dispersive device. The construction and analytical performance of this X-ray optic will be explained.