We present a re-discovery of G278.94+1.35a as possibly one of the largest known Galactic supernova remnants (SNRs) – that we name Diprotodon. While previously established as a Galactic SNR, Diprotodon is visible in our new Evolutionary Map of the Universe (EMU) and GaLactic and Extragalactic All-sky MWA (GLEAM) radio continuum images at an angular size of $3{{{{.\!^\circ}}}}33\times3{{{{.\!^\circ}}}}23$, much larger than previously measured. At the previously suggested distance of 2.7 kpc, this implies a diameter of 157$\times$152 pc. This size would qualify Diprotodon as the largest known SNR and pushes our estimates of SNR sizes to the upper limits. We investigate the environment in which the SNR is located and examine various scenarios that might explain such a large and relatively bright SNR appearance. We find that Diprotodon is most likely at a much closer distance of $\sim$1 kpc, implying its diameter is 58$\times$56 pc and it is in the radiative evolutionary phase. We also present a new Fermi-LAT data analysis that confirms the angular extent of the SNR in gamma rays. The origin of the high-energy emission remains somewhat puzzling, and the scenarios we explore reveal new puzzles, given this unexpected and unique observation of a seemingly evolved SNR having a hard GeV spectrum with no breaks. We explore both leptonic and hadronic scenarios, as well as the possibility that the high-energy emission arises from the leftover particle population of a historic pulsar wind nebula.

We have found a class of circular radio objects in the Evolutionary Map of the Universe Pilot Survey, using the Australian Square Kilometre Array Pathfinder telescope. The objects appear in radio images as circular edge-brightened discs, about one arcmin diameter, that are unlike other objects previously reported in the literature. We explore several possible mechanisms that might cause these objects, but none seems to be a compelling explanation.

Tabanids are haematophagous flies feeding on livestock and wildlife. In the absence of information on the relationship of tabanid flies and protozoan parasites in South Africa and Zambia, the current study was aimed at characterizing tabanid flies collected in these two countries as well as detecting protozoan parasites they are harbouring. A total of 527 tabanid flies were collected whereby 70·2% were from South Africa and 29·8% were from Zambia. Morphological analysis revealed a total of five different genera collected from the sampled areas namely: Ancala, Atylotus, Haematopota, Philoliche and Tabanus. DNA extracted from South African Tabanus par and Tabanus taeniola tested positive for the presence of Trypanosoma congolense (Savannah) and Trypanosoma theileri whilst one member from T. par was positive for Trypanosoma brucei species. DNA extracted from Zambian tabanid flies tested positive for the presence of Besnoitia species at 1·27% (2/157), Babesia bigemina 5·73% (9/157), Theileria parva 30·11% (30/157) and 9·82% (14/157) for Trypanosoma evansi. This study is the first to report on relationship of Babesia and Theileria parasites with tabanid flies. Further investigations are required to determine the role of tabanids in transmission of the detected protozoan parasites in livestock and wildlife in South Africa and Zambia.

C band backscatter parameters contain information about the upper snowpack/firn in the dry snow zone. The wide incidence angle diversity of the Advanced Scatterometer (ASCAT) gives unprecedented characterisation of backscatter anisotropy, revealing the backscatter response to climatic forcing. The A (isotropic component) and M 2 (bi-sinusoidal azimuth anisotropy) parameters are investigated here, in conjunction with data from atmospheric and snowpack models, to identify the backscatter response to surface forcing parameters (wind speed and persistence, precipitation, surface temperature, density and grain size). The long-term mean A parameter is successfully recreated with a regression using these drivers, indicating strong links between the A parameter and precipitation on long timescales. While the ASCAT time series is too short to determine which factors drive observed trends, factors influencing the seasonal and short timescale variability are revealed. On these timescales, A strongly responds to the propagation of surface temperature cycles/anomalies downward through the firn, via direct modulation of the dielectric constant. The influence of precipitation on A is small at shorter timescales. The M 2 parameter is controlled by wind speed and persistence, through modification of monodirectionally-aligned surface roughness. This variability indicates that throughout much of coastal Antarctica, a microwave ‘snapshot’ is generally not representative of longer-term conditions.

Here we discuss requirements for high performance and solution processable organic semiconductors, by presenting a systematic investigation of 7-alkyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophenes (Ph-BTBT-Cn ’s). We found that the solubility and thermal properties of Ph-BTBT-Cn ’s depend systematically on the substituted alkyl-chain length n. The observed features are well understood in terms of the change of molecular packing motif with n: The compounds with n ≤ 4 do not form independent alkyl chain layers, whereas those with n ≥ 5 form isolated alkyl chain layers. The latter compounds afford a series of isomorphous bilayer-type crystal structures that form two-dimensional carrier transport layers within the crystals. We also show that the Ph-BTBT-C10 afford high performance single-crystalline field-effect transistors the mobility of which reaches as high as 15.9 cm2/Vs. These results demonstrate a crucial role of the substituted alkyl chain length for obtaining high performance organic semiconductors and field-effect transistors.

The suppressive effect of various amino acids against ouabaininduced seizures was investigated in young female rats. The amino acids were injected into the left lateral ventricle 10 minutes prior to the intraventricular administration of 5 μg. of ouabain. Animals receiving 1.9 x 10-1 M solutions of hypotaurine and of β- alanine were almost completely protected from the ouabain seizures. Administration of L-alanine and of glycine was also effective, although running and leaping seizures still occurred to some extent. Betaine reduced only clonic-tonic and whole body flexion and extension seizures. In contrast, L-proline exclusively suppressed clonic-tonic and focal clonic seizures. Rats injected with isethionic acid showed increases in incidence of running and leaping seizures while L-arginine in high concentrations caused aggravation in clonic-tonic seizures. L-cysteine, even in low concentrations, also brought about an increase in the occurrence and incidence of clonic-tonic seizures. The ED50of hypotaurine was 10.11 x 10-2 M for running seizures and 4.63 x 10-2, M for clonictonic seizures; that of β -alanine was 14.01 x 10-2 M for running seizures and 5.50 x 10-2 M for clonic-tonic seizures. However, hypotaurine and β -alanine, the most effective compounds tested in the present studies, provided less protection than taurine previously examined by us under similar conditions (Izumi et al., 1973).

This article reviews recent progress in understanding the resistive switching (RS) behavior and improvements in device performance of RS metal oxide (MO) thin-film systems and devices. The diverse RS MO materials are classified according to their switching mechanisms and characteristics. For each category, some representative materials are selected, and their characteristics are discussed. In addition, other factors such as the device structure, which also plays a crucial role in determining the device properties, are discussed as well. When applied in a real circuit (e.g., in a crossbar structure), there are device features/characteristics that need to be considered, including the bias polarity for switching, the current-voltage relationship, reliability, and scaling issues. Since nonvolatile RS in many MO materials is primarily associated with localized conduction channels, understanding the nature and the dynamic change of the current path structure is crucial and therefore is reviewed at length here. Guidelines for the choice of materials and access devices and their fabrication methods will also be provided. Finally, this review concludes with the outlook and challenges of MO-based resistance change devices for semiconductor memories.

Payload and high-tech are important characteristics when the goals are aerospace applications. The development of the technologies associated to these applications has interests that transcend national boundaries and are of strategic importance to the nations. Ultra lightweight mirrors, supports and structures for optical systems are important part of this subject. This paper reports the development of SiC substrates, obtained by pressing, to be applied on embedded precision reflective optics. Different SiC granulometries, having YAG as sintering additive, were processed by: ball milling, drying and deagglomeration, sift, uniaxial and isostatic pressing, and, finally, argon atmosphere sintering at 1900°C. Different porosities were obtained according to the amount of organic material added. Into one side of the samples pellets of organic material were introduced to generate voids to reduce the weight of samples as a whole. The substrates were grinding and polished, looking for a SiC surface having low porosity, as porosity is directly related to light scattering that should be avoided on optical surfaces. Laser surface treatments were applied (using or not SiC barbotine) as a method to improve the surface quality. The samples were characterized by optical and laser confocal microscopy, roughness measurements and mechanical tests. The results are very promissory for future applications.

Influence of the linear energy-momentum relationship in graphene on conductance and magnetoresistance (MR) in ferromagnetic metal (FM)/graphene/FM lateral junctions is studied in a numerical simulation formulated using the Kubo formula and recursive Green’s function method in a tight-binding model. It is shown that the contribution of electron tunneling through graphene should be considered in the electronic transport in metal/graphene/metal junctions, and that the Dirac point (DP) is effectively shifted by the band mixing between graphene and metal electrodes. It is shown that MR appears due to spin-dependent shift of DP or spin-dependent change in the electronic states at DPs. It is shown that the MR ratio caused by the latter mechanism can be very high when certain transition metal alloys are used for electrodes. These results do not essentially depend on the shape of the junction structure. However, to obtain high MR ratios, the effects of roughness should be small.

Exchange coupling observed recently in Fe/ Fe3O4 (001) junctions shows comparable intensity to that in Co/Ru/Co trilayers, and has potential applicability to spintronics devices. To clarify the mechanism of the exchange coupling, electronic and magnetic states of Fe/ Fe3O4 junctions are calculated in the first principles method by assuming four junction structures of bcc Fe and Fe3O4 layers. It is shown that the local moments of bcc Fe atoms at the interface increase, but those of Fe ions at the interface of Fe3O4 layer decrease. The total energy of the junctions is plotted as a function of distance between Fe and Fe3O4 layers. Calculated results of the coupling energy between Fe and Fe3O4 layers, however, are larger than experimental ones by two orders of magnitude, and they correspond to inter-atomic exchange interactions at the interface. In order to explain the experimental results, we propose a mechanism of exchange coupling mediated by impurity-like states of interfacial Fe atoms which possess reversed magnetic moments in bcc Fe layer. Frustration effects in exchange coupling between Fe and Fe3O4 layers are also discussed.

An investigation is made of the role of hollow atoms in the spectra of an ultrashort-pulse-laser-driven Ar cluster target. Experimental measurements are presented from an Ar cluster-gas target using short-pulse lasers with various intensities, durations, and contrasts. Calculations in support of these measurements have been performed using a detailed atomic kinetics model with the ion distributions found from solution of the time-dependent rate equations. The calculations are in good agreement with the measurements and the role of hollow atoms in the resulting complicated spectra is analyzed. It is demonstrated that, although the presence of hollow atoms is estimated to add only around 2% to the total line emission, signatures of hollow atom spectra can be identified in the calculations, which are qualitatively supported by the experimental measurements.

The consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical properties of a device with any given dielectric requires the proper choice of metal gate electrode and capping layer. This study is intended to show the importance of tungsten processing optimization and subsequent effects on the equivalent oxide thickness, fixed charge, and density of interface states of La-Si-O gate dielectric MIS devices. In the experiment, La-Si-O films of physical thickness of 1.6 nm were deposited on a Si substrate, subsequently depositing TaN as the gate electrode and W as a capping layer. A post metallization anneal in flowing nitrogen at 1000°C for short times resulted in widely different measured properties of the MIS devices, dependent on the quality of the tungsten deposited. XRD and SIMS profiles of the gate stacks showed a clear relationship between concentration of oxygen and processing of the tungsten. A 1000°C, 10 sec anneal resulted in an EOT change from 1.1 nm to 2.2 nm on gate stacks with low and high oxygen concentration in the tungsten, respectively. Defect densities decreased with increased anneal temperature and time, and annealing with low oxygen-concentration tungsten resulted in higher effective fixed charge. SIMS data suggests that oxygen in the tungsten diffuses to the Si/La-Si-O interface through the TaN electrode, resulting in the observed differences in the defect densities and EOT.

Division XI was born by merging Commission 44 “Space and High Energy Astrophysics” and Commission 48 “High Energy Astrophysics” by the decision at the IAU General Assembly in The Hague (1994). As the naming of space astronomy is technique oriented, i.e. astronomy from space, it covers quite a wide range of astronomy, almost all branches of astronomy are included by the progress of space observations. Historically, it started from high energy astronomy, UV, X, and gamma rays astronomy, somewhat including cosmic ray physics. However, in these days, space observations have expanded to low energy astronomy, such as optical, infrared, submillimeter and even radio waves(Space VLBI).