Chapter 2 covers the appropriate level of basic device physics to make the book self-contained, and to prepare the reader with the necessary background on device operation and material physics to follow the discussion in the rest of the book. Starting with the energy bands in silicon, Chapter 2 introduces the basic concepts of Fermi level, carrier concentration, drift and diffusion current transport, and Poisson’s equation. Also addressed in this chapter are generation and recombination, minority carrier lifetime, and current continuity equation.
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