Fundamentals of Modern VLSI Devices

Chapter 5 describes the basic characteristics of MOSFET devices, using n-channel MOSFET as an example for most of the discussions. It deals with the more elementary long-channel MOSFETs, with sections on the charge sheet model, regional I–V models, and subthreshold current characteristics. A recently developed non-GCA model gives insights to the saturation region behavior while clarifying the misleading term of “pinch-off” in most standard textbooks. In the section on channel mobility, the strain effects, both biaxial and uniaxial, on electron and hole mobilities are discussed. The last section addresses the body effect, temperature effect, and quantum effect on the long-channel threshold voltage.