Fundamentals of Modern VLSI Devices

Chapter 4 covers the fundamentals of MOS capacitors – a prerequisite to MOSFET transistors. Starting with the basic concepts of free electron level and work function, the chapter proceeds to the solution of charge and potential in silicon, followed by a full description of the C–V characteristics. Quantum mechanical effects, important for MOS capacitors of thin oxides, are then discussed. Added in the third edition is a new section on interface states and oxide traps. Lastly, the high field section covers tunneling currents, high-κ gate dielectrics, and gate oxide reliability.