Fundamentals of Modern VLSI Devices

In Chapter 12, the basic operational and device design principles of commonly used memory devices are discussed. The memory devices covered include CMOS SRAM, DRAM, bipolar SRAM, and several commonly used in nonvolatile memories. Typical read, write, and erase operations of the various memory arrays are explained. The issue of noise margin in scaled CMOS SRAM cells is discussed. A brief discussion of more recent developments of NAND flash technologies, including multi-bit per cell, 3D NAND, and wear leveling is given.