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Chapter 3: p−n Junctions and Metal−Silicon Contacts

Chapter 3: p−n Junctions and Metal−Silicon Contacts

pp. 43-98

Authors

, University of California, San Diego,
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Extract

Chapter 3 covers the basic physics and operation of p−n junctions and Schottky diodes as well as metal−silicon contacts in general. p−n junctions are basic building blocks of bipolar transistors and key components of MOSFETs. Basic knowledge of their characteristics is a prerequisite to further understand the operation of bipolar devices and for designing MOSFETs. And basic knowledge of Schottky diodes is a prerequisite to understand metal−silicon contacts in general and for designing ohmic contacts with low contact resistance. The chapter ends with a discussion of high-field effects in reverse-biased diodes.

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