Fundamentals of Modern VLSI Devices

Chapter 10 covers the basic design of a bipolar transistor. The design of the individual device regions, namely the emitter, the base, and the collector, are discussed separately. Since the detailed characteristics of a bipolar transistor depend on its operating point, the focus of this chapter is on optimizing the device design according to its intended operating condition and environment, and on the tradeoffs that must be made in the optimization process. The physics and characteristics of SiGe-base bipolar transistors are discussed in depth. The design of symmetric lateral bipolar transistors on SOI is also covered, including the development of analytical models for the device parameters, base and collector currents, and the transit times.