Fundamentals of Modern VLSI Devices

Chapter 7 deals with fully-depleted SOI and double-gate MOSFETs. A general, asymmetric double-gate model is applied to long channel SOI MOSFETs. For symmetric double-gate MOSFETs – the generic form of FinFETs, an analytic potential model is described that covers all regions of operation continuously. The scale length model first introduced in Chapter 6 for bulk MOSFETs is modified for short-channel DG MOSFETs. Nanowire MOSFET models, both long and short channel, are also discussed. The last section examines the scaling limits of DG and nanowire MOSFETs based on quantum mechanical considerations.