This chapter deals with the more complex short-channel MOSFETs. Most circuits are built with short-channel devices because of their higher current and lower capacitance. Among the main topics are short-channel effects, scale length model, velocity saturation, and non-local transport. A ballistic MOSFET model is described on the current limit of a MOSFET. Next considered are the major device design issues in a CMOS technology: choice of threshold voltage based on the off-current requirement and on-current performance, power supply voltage, design of nonuniform channel doping, and discrete dopant effects on threshold voltage. The last section discusses high-field effects in a short-channel MOSFET.
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